component
MMBT2222A-G
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBT2222A-G
Changjing · Bipolar (BJT) · SOT-23
MMBT2222A-G from Changjing, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, so use the maximum ratings (emitter-base voltage VEBO 6 V). |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; the maximum emitter-base voltage is VEBO = 6 V. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; the maximum collector-emitter voltage is VCEO = 40 V and continuous collector current IC is 600 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | V | IC= 10mA, IB=0 | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | 75 | V | IC= 10μA, IE=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10μA, IC=0 | 1 | ||
| DC current gain | hFE(2) | 40 | VCE=10V, IC= 0.1mA | 1 | |||
| DC current gain | hFE(1) | 100 | 300 | VCE=10V, IC= 150mA | 1 | ||
| DC current gain | hFE(3) | 42 | VCE=10V, IC= 500mA | 1 | |||
| Transition frequency | fT | 300 | MHz | VCE=20V, IC= 20mA, f=100MHz | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 1 | V | IC=500 mA, IB= 50mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=150 mA, IB=15mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 2 | V | IC=500 mA, IB= 50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=150 mA, IB=15mA | 1 | ||
| Collector cut-off current | ICBO | 0.01 | μA | VCB=60V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | μA | VEB= 3V, IC=0 | 1 | ||
| Delay time | td | 10 | ns | 1 | |||
| Rise time | tr | 25 | ns | VCC=30V, VBE(off)=-0.5V IC=150mA , IB1= 15mA | 1 | ||
| Storage time | tS | 225 | ns | 1 | |||
| Fall time | tf | 60 | ns | VCC=30V, IC=150mA IB1=-IB2=15mA | 1 | ||
| Collector-base voltage | VCBO | 75 | V | 1 | |||
| Collector-emitter voltage | VCEO | 40 | V | 1 | |||
| Emitter-base voltage | VEBO | 6 | V | 1 | |||
| Collector current, continuous | IC | 600 | mA | 1 | |||
| Collector dissipation | PC | 300 | mW | 1 | |||
| Thermal resistance, junction to ambient | RΘJA | 417 | ℃/W | 1 | |||
| Junction temperature | TJ | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
MMBT2222A-G - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbt2222a-g-etched.step/mmbt2222a-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbt2222a-g.step/mmbt2222a-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
2f14d0d9d0232cea, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).