component
CXT3904TR-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCXT3904TR-HXY
HXY MOSFET · Bipolar (BJT) · SOT-89
CXT3904TR-HXY from HXY MOSFET, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; drives the device, with VEBO max 6 V and VBE(sat) max 0.85 V at IC=10mA, IB=1mA. |
| 2 | C | passive | Collector of the NPN transistor (also the tab); VCBO 60 V, VCEO 40 V, continuous IC 0.2 A. |
| 3 | E | passive | Emitter of the NPN transistor; VEBO max 6 V relative to base. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 60 | V | Ta=25°C unless otherwise noted | 1 | ||
| Collector-emitter voltage | VCEO | 40 | V | Ta=25°C unless otherwise noted | 1 | ||
| Emitter-base voltage | VEBO | 6 | V | Ta=25°C unless otherwise noted | 1 | ||
| Collector current, continuous | IC | 0.2 | A | Ta=25°C unless otherwise noted | 1 | ||
| Collector power dissipation | PC | 0.5 | W | Ta=25°C unless otherwise noted | 1 | ||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=100μA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 50 | V | IC=1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 50 | nA | VCB=30V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 50 | nA | VEB=1V, IC=0 | 1 | ||
| DC current gain | hFE(1) | 80 | VCE=1V, IC=1mA | 1 | |||
| DC current gain | hFE(2) | 100 | 300 | VCE=1V, IC=10mA | 1 | ||
| DC current gain | hFE(3) | 60 | VCE=1V, IC=50mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.2 | V | IC=10mA, IB=1mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.3 | V | IC=50mA, IB=5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 0.85 | V | IC=10mA, IB=1mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 0.95 | V | IC=50mA, IB=5mA | 1 | ||
| Collector capacitance | CC | 6 | pF | VCB=5V, IE=0, f=1MHz | 1 |
CAD (KiCad official)
- Symbol:
CXT3904TR-HXY - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
cxt3904tr-hxy-etched.step/cxt3904tr-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cxt3904tr-hxy.step/cxt3904tr-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
777c2471c11a2662, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).