component
ASDM100R090NP-T
Public Made by Adomby adom
Ascend MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownASDM100R090NP-T
Ascend · MOSFETs · TO-220
ASDM100R090NP-T from Ascend, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limit is +20/-12 V, with a typical threshold of 1.8 V (1 to 2.5 V) at ID=250µA. |
| 2 | D | passive | Drain; drain-to-source voltage is rated 100 V, with continuous current of 75 A at TC=25℃ (silicon limited). |
| 3 | S | passive | Source; connects to the body diode anode and carries the full drain current (75 A at TC=25℃, 38 A at TC=100℃). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Ascend |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDS | 100 | V | 1 | |||
| Gate to Source Voltage | VGS | -12 | 20 | V | 1 | ||
| Continuous Drain Current (Silicon Limited) | ID | 75 | A | TC=25℃ | 1 | ||
| Continuous Drain Current (Silicon Limited) | ID | 38 | A | TC=100℃ | 1 | ||
| Avalanche Energy, Single Pulse | EAS | 80 | mJ | L=0.1mH, TC=25℃ | 1 | ||
| Operating and Storage Temperature | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient (steady state) | RθJA | 75 | ℃/W | steady state | 1 | ||
| Thermal Resistance Junction-Ambient (t≤10s) | RθJA | 40 | ℃/W | t≤10s | 1 | ||
| Thermal Resistance Junction-Lead | RθJL | 23 | ℃/W | 1 | |||
| Drain to Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS=0V, ID=250µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 2.5 | V | VGS=VDS, ID=250µA | 2 |
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VGS=0V, VDS=95V, Tj=25℃ | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | µA | VGS=0V, VDS=95V, Tj=125℃ | 2 | ||
| Drain to Source on Resistance | RDS(on) | 9 | 12 | mΩ | VGS=10V, ID=14A | 2 | |
| Drain to Source on Resistance | RDS(on) | 12 | 15.5 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Diode Forward Voltage | VSD | 0.9 | 1.2 | V | VGS=0V, IF=14A | 2 |
CAD (KiCad official)
- Symbol:
ASDM100R090NP-T - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
asdm100r090np-t-etched.step/asdm100r090np-t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asdm100r090np-t.step/asdm100r090np-t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Ascend datasheet (8 pp, sha256
9899b05bddf17817, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).