component
AOD7N65
Public Made by Adomby adom
Alpha & Omega Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAOD7N65
Alpha & Omega Semicon · MOSFETs · TO-252
AOD7N65 from Alpha & Omega Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel with a maximum gate-source voltage of ±30 V and RDS(ON) specified at VGS=10 V. |
| 2 | D | passive | Drain; 650 V maximum drain-source voltage, 7 A continuous drain current at TC=25°C. |
| 3 | S | passive | Source; connects to the body diode anode, with 7 A maximum continuous body-diode current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha & Omega Semicon |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID=250µA, VGS=0V, TJ=25°C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 750 | V | ID=250µA, VGS=0V, TJ=150°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=650V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS=520V, TJ=125°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±30V | 2 | |
| Gate Threshold Voltage | VGS(th) | 3.3 | 3.9 | 4.5 | V | VDS=5V, ID=250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 1.2 | 1.56 | Ω | VGS=10V, ID=3.5A | 2 | |
| Diode Forward Voltage | VSD | 0.72 | 1 | V | IS=1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 7 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 23 | A | 2 | |||
| Input Capacitance | Ciss | 780 | 982 | 1180 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Output Capacitance | Coss | 60 | 86 | 115 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss | 4 | 7 | 10 | pF | VGS=0V, VDS=25V, f=1MHz | 2 |
| Gate resistance | Rg | 1.5 | 3.2 | 5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Total Gate Charge | Qg | 15 | 19.6 | 24 | nC | VGS=10V, VDS=520V, ID=7A | 2 |
| Body Diode Reverse Recovery Time | trr | 290 | 365 | 440 | ns | IF=7A, dI/dt=100A/µs, VDS=100V | 2 |
| Body Diode Reverse Recovery Charge | Qrr | 3.4 | 4.3 | 5.4 | µC | IF=7A, dI/dt=100A/µs, VDS=100V | 2 |
| Drain-Source Voltage | VDS | 650 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -30 | 30 | V | TA=25°C | 1 | |
| Continuous Drain Current | ID | 7 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | 4.3 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | 23 | A | 1 | |||
| Avalanche Current | IAR | 3.1 | A | 1 | |||
| Repetitive avalanche energy | EAR | 144 | mJ | 1 | |||
| Single pulsed avalanche energy | EAS | 288 | mJ | L=60mH, IAS=3.1A, VDD=150V, RG=10Ω, Starting TJ=25°C | 1 | ||
| Peak diode recovery dv/dt | dv/dt | 5 | V/ns | 1 | |||
| Power Dissipation | PD | 178 | W | TC=25°C | 1 | ||
| Power Dissipation Derate above 25°C | PD | 1.4 | W/°C | 1 | |||
| Junction and Storage Temperature Range | TJ, TSTG | -50 | 150 | °C | 1 | ||
| Maximum lead temperature for soldering | TL | 300 | °C | 1/8" from case for 5 seconds | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 45 | 55 | °C/W | Note A,G | 1 | |
| Maximum Case-to-sink | RθCS | 0.5 | °C/W | Note A | 1 | ||
| Maximum Junction-to-Case | RθJC | 0.7 | °C/W | Note D,F | 1 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.67 | V/°C | ID=250µA, VGS=0V | 2 | ||
| Forward Transconductance | gFS | 7 | S | VDS=40V, ID=3.5A | 2 | ||
| Gate Source Charge | Qgs | 4.6 | nC | VGS=10V, VDS=520V, ID=7A | 2 | ||
| Gate Drain Charge | Qgd | 8.2 | nC | VGS=10V, VDS=520V, ID=7A | 2 | ||
| Turn-On Delay Time | tD(on) | 26 | ns | VGS=10V, VDS=325V, ID=7A, RG=25Ω | 2 | ||
| Turn-On Rise Time | tr | 43 | ns | VGS=10V, VDS=325V, ID=7A, RG=25Ω | 2 | ||
| Turn-Off Delay Time | tD(off) | 53 | ns | VGS=10V, VDS=325V, ID=7A, RG=25Ω | 2 | ||
| Turn-Off Fall Time | tf | 32 | ns | VGS=10V, VDS=325V, ID=7A, RG=25Ω | 2 |
CAD (KiCad official)
- Symbol:
AOD7N65 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
aod7n65-etched.step/aod7n65-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aod7n65.step/aod7n65.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha & Omega Semicon datasheet (6 pp, sha256
e954e929b2ab1872, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).