component
BCX56-16-2AF
Public Made by Adomby adom
FOSAN Bipolar (BJT), SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBCX56-16-2AF
FOSAN · Bipolar (BJT) · SOT-89-3L
BCX56-16-2AF from FOSAN, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max is 5 V and the base-emitter on voltage is 1 V max at VCE=2 V, IC=0.5 A. |
| 2 | C | passive | Collector (also the metal tab) of the NPN transistor; for BCX56 VCEO is 80 V max, VCBO is 100 V max and IC is 1000 mA max. |
| 3 | E | passive | Emitter of the NPN transistor; total power dissipation is 500 mW at Ta=25 °C and the junction temperature range is -55 to +150 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FOSAN |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 100 | V | IC= 100uA, IE=0 | 2 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 80 | V | IC= 10mA, IB=0 | 2 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | IE= 100uA, IC=0 | 2 | ||
| Collector-Base Leakage Current | ICBO | 100 | nA | VCB= 80V, IE=0 | 2 | ||
| Emitter-Base Leakage Current | IEBO | 100 | nA | VEB= 5V, IC=0 | 2 | ||
| DC Current Gain | HFE(1) | 40 | VCE= 2V, IC= 5mA | 2 | |||
| DC Current Gain (-16-2AF) | HFE(2) | 100 | 250 | VCE=2V, IC=0.15A | 2 | ||
| DC Current Gain | HFE(3) | 25 | VCE= 2V, IC= 0.5A | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC= 0.5A, IB= 50mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1 | V | IC= 500mA, IB= 50mA | 2 | ||
| Base-Emitter On Voltage | VBE(on) | 1 | V | VCE= 2V, IC= 0.5A | 2 | ||
| Transition Frequency | fT | 130 | MHZ | VCE= 5V, IC= 10mA | 2 | ||
| Output Capacitance | Cob | 15 | pF | VCB= 10V, IE=0, f=1MHZ | 2 | ||
| Collector-Base Voltage | VCBO | 100 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 80 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current | IC | 1000 | mA | 1 | |||
| Power dissipation | PC | 500 | mW | Ta=25℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RΘJA | 250 | ℃/W | 1 | |||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
BCX56-16-2AF - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
bcx56-16-2af-etched.step/bcx56-16-2af-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bcx56-16-2af.step/bcx56-16-2af.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FOSAN datasheet (4 pp, sha256
1794c3839fb5e27e, retrieved 2026-10-15, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).