component
U3213E
Public Made by Adomby adom
UNI SEMIC DC-DC Converters, ESOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownU3213E
UNI SEMIC · DC-DC Converters · ESOP-8
U3213E from UNI SEMIC, in a ESOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VDD | power_in | Chip supply pin that also serves as the output-voltage feedback input when FB is floating; a 0.1uF SMD capacitor is recommended, with VDD_ON typ 7.5 V, VDD undervoltage typ 4.5 V, VDD overvoltage protection typ 24 V and internal clamp typ 26 V at 10 mA. |
| 2 | GND | power_in | Chip reference ground. |
| 3 | FB | input | Feedback input; left floating it sets the default 14.3 V output, with VFB_REF typ 1.87 V, output overvoltage threshold typ 2.40 V and overload threshold typ 1.40 V. |
| 4 | CS | output | Peak current sense pin; the peak current threshold is typ 0.3 V, with abnormal overcurrent protection threshold typ 0.6 V and 350 ns leading-edge blanking. |
| 5 | Drain | power_in | Drain of the internal high-voltage MOSFET, rated for a breakdown voltage of typ 200 V and a Drain pin voltage range of -0.3 to 200 V. |
| 6 | Drain | power_in | Drain of the internal high-voltage MOSFET, rated for a breakdown voltage of typ 200 V and a Drain pin voltage range of -0.3 to 200 V. |
| 7 | Drain | power_in | Drain of the internal high-voltage MOSFET, rated for a breakdown voltage of typ 200 V and a Drain pin voltage range of -0.3 to 200 V. |
| 8 | GND | power_in | Chip reference ground. |
| 9 | Drain | power_in | Exposed-pad drain of the internal high-voltage MOSFET, which must be well soldered to the PCB (datasheet notes this exposed pad applies to the U3213E). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UNI SEMIC |
| Package | ESOP-8 |
| Category | Power Management (PMIC) |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain pin voltage | -0.3 | 200 | V | 5 | |||
| VDD supply voltage | 30 | V | 5 | ||||
| VDD clamp current | 10 | mA | 5 | ||||
| FB, CS pin voltage | -0.3 | 7 | V | 5 | |||
| Maximum junction temperature | 160 | °C | 5 | ||||
| Storage temperature | -65 | 150 | °C | 5 | |||
| Pin temperature (soldering, 10 s) | 260 | °C | 5 | ||||
| ESD capability (human body model) | 3 | KV | 5 | ||||
| ESD capability (machine model) | 250 | V | 5 | ||||
| Operating ambient temperature | -40 | 125 | °C | 5 | |||
| Thermal resistance, junction-to-ambient (ESOP-8) | 165 | °C/W | 5 | ||||
| HV pin supply current | IHV | 1 | 5 | mA | HV=90V, VDD=0V | 5 | |
| HV pin leakage current | IHV_leakage | 50 | uA | HV=90V, VDD=12V | 5 | ||
| VDD startup current | IVDD_st | 100 | 300 | uA | 无开关工作 | 5 | |
| Internal differential amplifier reference (FB) | VFB_REF | 1.84 | 1.87 | 1.9 | V | 6 | |
| VDD operating current | IVDD_Op | 800 | uA | Fsw=60kHz | 5 | ||
| VDD quiescent current | IVDD_Q | 200 | uA | 5 | |||
| VDD turn-on voltage | VDD_ON | 7.5 | V | 5 | |||
| VDD undervoltage lockout voltage | VDD_OFF | 4.5 | V | 5 | |||
| VDD regulation voltage | VDD_Reg1 | 14.3 | V | FB 悬空 | 5 | ||
| VDD overvoltage protection threshold | VDD_OVP | 24 | V | 5 | |||
| VDD clamp voltage | VDD_Clamp | 26 | V | IVDD=10mA | 5 | ||
| Output overvoltage protection (OVP) threshold on FB | VFB_OVP | 2.4 | V | 6 | |||
| Overload protection (OLP) threshold on FB | VFB_OLP | 1.4 | V | 6 | |||
| Overload protection delay time | TD_OLP | 100 | ms | 6 | |||
| Leading-edge blanking | TLEB | 350 | ns | 6 | |||
| Overcurrent comparator delay | TD_OCP | 100 | ns | 6 | |||
| Peak current threshold | VIPK | 0.3 | V | 6 | |||
| Abnormal overcurrent protection (AOCP) threshold | VAOCP | 0.6 | V | 6 | |||
| Typical minimum off time | TOFF_min_norm | 10 | us | 6 | |||
| Typical maximum off time | TOFF_max_norm | 1.4 | ms | 6 | |||
| Maximum off time in dynamic response mode | TOFF_max_FDR | 420 | us | 6 | |||
| Maximum on time | TON_max | 40 | us | 6 | |||
| Internal soft-start time | Tss | 4 | ms | 6 | |||
| Auto-recovery delay time | TAuto_Recovery | 2 | s | 6 | |||
| Overtemperature protection threshold | TSD | 150 | °C | 6 | |||
| Power MOSFET breakdown voltage | VBR | 200 | V | 6 | |||
| Static on-resistance (U3213E) | Rdson | 0.71 | Ω | 6 |
CAD (KiCad official)
- Symbol:
U3213E - Footprint:
Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm - 3D model: ESOP-8 (KiCad packages3D, STEP)
- 3D model files:
u3213e-etched.step/u3213e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);u3213e.step/u3213e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UNI SEMIC datasheet (12 pp, sha256
f71963cde1218ff9, retrieved 2026-10-18, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).