component

2N7002-G

Public Made by Adom

by adom

Changjiang Electronics Tech (CJ) MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors2n7002-gfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

2N7002-G

Changjiang Electronics Tech (CJ) · MOSFETs · SOT-23

2N7002-G from Changjiang Electronics Tech (CJ), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GATE input Gate terminal; the maximum gate-source voltage VGS is ±20 V.
2 SOURCE passive Source terminal, the reference for VGS; the datasheet rates the source current IS at 115 mA.
3 DRAIN passive Drain terminal; the drain-source voltage VDS is rated at 60 V with a continuous drain current of 0.115 A.

Key specifications

Parameter Value
Manufacturer Changjiang Electronics Tech (CJ)
Package SOT-23
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Continuous Drain Current ID 0.115 A 1
Power Dissipation PD 0.225 W 1
Gate-Source Voltage VGS -20 20 V 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Tstg -50 150 ℃ 1
Thermal Resistance from Junction to Ambient RθJA 556 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS 60 V VGS=0 V, ID=250 µA 2
Gate-Threshold Voltage Vth(GS) 1 1.6 V VDS=VGS, ID=250 µA 2
Gate-body Leakage lGSS -80 80 nA VDS=0 V, VGS=±20 V 2
Zero Gate Voltage Drain Current IDSS 80 nA VDS=60 V, VGS=0 V 2
On-state Drain Current ID(ON) 500 mA VGS=10 V, VDS=7 V 2
Drain-Source On-Resistance RDS(on) 0.9 5 Ω VGS=10 V, ID=500mA 2
Drain-Source On-Resistance RDS(on) 1.1 7 Ω VGS=5 V, ID=50mA 2
Forward Transconductance gfs 80 ms VDS=10 V, ID=200mA 2
Drain-source on-voltage VDS(on) 0.5 3.75 V VGS=10V, ID=500mA 2
Drain-source on-voltage VDS(on) 0.05 0.375 V VGS=5V, ID=50mA 2
Diode Forward Voltage VSD 0.55 1.2 V IS=115mA, VGS=0 V 2
Input Capacitance Ciss 50 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 25 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 5 pF VDS=25V, VGS=0V, f=1MHz 2
Turn-on Time td(on) 20 ns VDD=25 V, RL=50Ω, ID=500mA, VGEN=10 V, RG=25Ω 2
Turn-off Time td(off) 40 ns VDD=25 V, RL=50Ω, ID=500mA, VGEN=10 V, RG=25Ω 2

CAD (KiCad official)

  • Symbol: 2N7002-G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2n7002-g-etched.step / 2n7002-g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n7002-g.step / 2n7002-g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjiang Electronics Tech (CJ) datasheet (5 pp, sha256 7941fb423af7c6c6, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF