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NCEP40T15AGU
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Wuxi NCE Power Semiconductor MOSFETs, DFN5X6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCEP40T15AGU
Wuxi NCE Power Semiconductor · MOSFETs · DFN5X6-8L
NCEP40T15AGU from Wuxi NCE Power Semiconductor, in a DFN5X6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET; VDS max 40V, continuous drain current 150A (silicon limited). |
| 2 | S | passive | Source of the N-channel MOSFET; VDS max 40V, continuous drain current 150A (silicon limited). |
| 3 | S | passive | Source of the N-channel MOSFET; VDS max 40V, continuous drain current 150A (silicon limited). |
| 4 | G | input | Gate of the N-channel MOSFET; gate-source voltage limited to ±20V, threshold 2.0V to 4.0V at 250μA. |
| 5 | D | passive | Drain of the N-channel MOSFET, joined to the exposed drain tab; VDS max 40V, pulsed drain current 400A. |
| 6 | D | passive | Drain of the N-channel MOSFET, joined to the exposed drain tab; VDS max 40V, pulsed drain current 400A. |
| 7 | D | passive | Drain of the N-channel MOSFET, joined to the exposed drain tab; VDS max 40V, pulsed drain current 400A. |
| 8 | D | passive | Drain of the N-channel MOSFET, joined to the exposed drain tab; VDS max 40V, pulsed drain current 400A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | DFN5X6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 1.2 | 1.5 | mΩ | VGS=10V, ID=75A | 2 | |
| Forward Transconductance | gFS | 80 | S | VDS=5V,ID=75A | 2 | ||
| Diode Forward Current | IS | 150 | A | 2 | |||
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous (Silicon Limited) | ID | 150 | A | 1 | |||
| Drain Current-Continuous | ID(100℃) | 106 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current (Package Limited) | IDM | 400 | A | 1 | |||
| Maximum Power Dissipation | PD | 135 | W | 1 | |||
| Single pulse avalanche energy | EAS | 1620 | mJ | Note 5: Tj=25℃, VDD=20V, VG=10V, L=0.5mH, Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.93 | ℃/W | Note 2 | 1 |
CAD (KiCad official)
- Symbol:
NCEP40T15AGU - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8L (KiCad packages3D, STEP)
- 3D model files:
ncep40t15agu-etched.step/ncep40t15agu-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep40t15agu.step/ncep40t15agu.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (6 pp, sha256
f9440c6321781e5e, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).