component
FDS2582
Public Made by Adomby adom
onsemi MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownFDS2582
onsemi · MOSFETs · SO-8
FDS2582 from onsemi, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3 as shown in the package schematic. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3 as shown in the package schematic. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2 as shown in the package schematic. |
| 4 | G | input | Gate of the N-channel MOSFET, with VGS rated ±20 V and a threshold of 2 to 4 V at ID = 250µA. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied with pins 6, 7 and 8, with VDSS rated 150 V and ID 4.1 A continuous. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 7 and 8, with VDSS rated 150 V. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 8, with VDSS rated 150 V. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 7, with VDSS rated 150 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 150 | V | ID = 250µA, VGS = 0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 120V, VGS = 0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 120V, VGS = 0V, TC = 150°C | 3 | ||
| Gate to Source Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V | 3 | |
| Gate to Source Threshold Voltage | VGS(TH) | 2 | 4 | V | VGS = VDS, ID = 250µA | 3 | |
| Drain to Source On Resistance | rDS(ON) | 0.057 | 0.066 | Ω | ID = 4.1A, VGS = 10V | 3 | |
| Drain to Source On Resistance | rDS(ON) | 0.065 | 0.098 | Ω | ID = 2A, VGS = 6V | 3 | |
| Drain to Source On Resistance | rDS(ON) | 0.125 | 0.146 | Ω | ID = 4.1A, VGS = 10V, TC = 150°C | 3 | |
| Total Gate Charge at 10V | Qg(TOT) | 19 | 25 | nC | VGS = 0V to 10V, VDD = 75V, ID = 4.1A, Ig = 1.0mA | 3 | |
| Threshold Gate Charge | Qg(TH) | 2.3 | 3 | nC | VGS = 0V to 2V | 3 | |
| Turn-On Time | tON | 45 | ns | VDD = 75V, ID = 4.1A, VGS = 10V, RGS = 16Ω | 3 | ||
| Turn-Off Time | tOFF | 92 | ns | VDD = 75V, ID = 4.1A, VGS = 10V, RGS = 16Ω | 3 | ||
| Source to Drain Diode Voltage | VSD | 1.25 | V | ISD = 4.1A | 3 | ||
| Source to Drain Diode Voltage | VSD | 1 | V | ISD = 2A | 3 | ||
| Reverse Recovery Time | trr | 63 | ns | ISD = 4.1A, dISD/dt = 100A/µs | 3 | ||
| Reverse Recovered Charge | QRR | 116 | nC | ISD = 4.1A, dISD/dt = 100A/µs | 3 | ||
| Drain to Source Voltage | VDSS | 150 | V | TA = 25°C unless otherwise noted | 2 | ||
| Gate to Source Voltage | VGS | -20 | 20 | V | TA = 25°C unless otherwise noted | 2 | |
| Drain Current Continuous | ID | 4.1 | A | TA = 25°C, VGS = 10V, RθJA = 50°C/W | 2 | ||
| Drain Current Continuous | ID | 2.6 | A | TA = 100°C, VGS = 10V, RθJA = 50°C/W | 2 | ||
| Single Pulse Avalanche Energy | EAS | 252 | mJ | Note 1: Starting TJ = 25°C, L = 56mH, IAS = 3A | 2 | ||
| Power Dissipation | PD | 2.5 | W | TA = 25°C | 2 | ||
| Derate above 25°C | PD | 20 | mW/°C | Derate above 25°C | 2 | ||
| Operating and Storage Temperature | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Ambient at 10 seconds | RθJA | 50 | °C/W | Note 3, 10 seconds | 2 | ||
| Thermal Resistance, Junction to Ambient at 1000 seconds | RθJA | 80 | °C/W | Note 3, 1000 seconds | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 25 | °C/W | Note 2 | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | copper | drain pins. RθJC is guaranteed by design while RθCA is determined by the user’s board design. 3: RθJA is measured with 1.0 in2 copper on FR-4 board | 3 |
CAD (KiCad official)
- Symbol:
FDS2582 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
fds2582-etched.step/fds2582-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fds2582.step/fds2582.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (13 pp, sha256
412f0d8b64d18883, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).