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Contents

README

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66N03

GOFORD · MOSFETs · TO-252

66N03 from GOFORD, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS(th) 1.0 to 2.2 V at ID = 250µA and an absolute maximum VGS of ±20 V.
2 D passive Drain, the center lead which is trimmed short and shares the metal tab; rated VDS 30 V, ID 36 A continuous and 144 A pulsed.
3 S passive Source; the body diode conducts from source to drain at up to IS 30 A with VSD max 1.2 V.

Key specifications

Parameter Value
Manufacturer GOFORD
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V 2
Gate-Source Threshold Voltage VGS(th) 1 1.6 2.2 V VDS = VGS, ID = 250µA 2
Drain-Source On-Resistance RDS(on) 7 8.5 mΩ VGS = 10V, ID = 20A 2
Drain-Source On-Resistance RDS(on) 11 14 mΩ VGS = 4.5V, ID = 15A 2
Continuous Body Diode Current IS 30 A TC = 25ºC 2
Body Diode Voltage VSD 1.2 V TJ = 25ºC, ISD = 20A, VGS = 0V 2
Drain-Source Voltage VDS 30 V TC = 25ºC 1
Continuous Drain Current ID 36 A TC = 25ºC 1
Pulsed Drain Current IDM 144 A TC = 25ºC 1
Gate-Source Voltage VGS -20 20 V TC = 25ºC 1
Power Dissipation PD 31 W TC = 25ºC 1
Single pulse avalanche energy EAS 36 mJ TC = 25ºC 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ºC TC = 25ºC 1
Thermal Resistance, Junction-to-Case (printed label) RthJA 50 ºC/W 1
Maximum Junction-to-Case RthJC 4 ºC/W 1
Forward Transconductance gFS 30 S VGS = 5V, ID = 20A 2
Input Capacitance Ciss 1040 pF VGS = 0V, VDS = 15V, f = 1.0MHz 2
Output Capacitance Coss 150 pF VGS = 0V, VDS = 15V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 136 pF VGS = 0V, VDS = 15V, f = 1.0MHz 2
Total Gate Charge Qg 14 nC VDD = 15V, ID = 20A, VGS = 10V 2
Gate-Source Charge Qgs 3 nC VDD = 15V, ID = 20A, VGS = 10V 2
Gate-Drain Charge Qgd 2.5 nC VDD = 15V, ID = 20A, VGS = 10V 2
Turn-on Delay Time td(on) 7 ns VDD = 15V, ID = 20A, RG = 3Ω 2
Turn-on Rise Time tr 13.5 ns VDD = 15V, ID = 20A, RG = 3Ω 2
Turn-off Delay Time td(off) 18.5 ns VDD = 15V, ID = 20A, RG = 3Ω 2
Turn-off Fall Time tf 4 ns VDD = 15V, ID = 20A, RG = 3Ω 2
Reverse Recovery Charge Qrr 20 nC IF = 20A, VGS = 0V, di/dt=500A/us 2
Reverse Recovery Time Trr 12 ns IF = 20A, VGS = 0V, di/dt=500A/us 2

CAD (KiCad official)

  • Symbol: 66N03
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 66n03-etched.step / 66n03-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 66n03.step / 66n03.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (6 pp, sha256 694fe183a0d9a85f, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF