component

CMP060N10

Public Made by Adom

by adom

Cmos MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorcmp060n10factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

CMP060N10

Cmos · MOSFETs · TO-220

CMP060N10 from Cmos, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold 2 to 4 V at ID=250µA.
2 D passive Drain; drain-source voltage rated 100 V, continuous drain current 90 A at TC=25℃ (pulsed 360 A).
3 S passive Source; continuous body-diode source current 90 A, pulsed 360 A.

Key specifications

Parameter Value
Manufacturer Cmos
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 90 A TC=25℃ 1
Continuous Drain Current ID@TC=100℃ 72 A TC=100℃ 1
Pulsed Drain Current IDM 360 A 1
Single Pulse Avalanche Energy EAS 612 mJ VDD=40V, VGS=10V, L=0.5mH, ID=49.5A 1
Total Power Dissipation PD 265 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 60 ℃/W 1
Thermal Resistance Junction-Case RθJC 0.47 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250μA 2
Gate Threshold Voltage VGS(th) 2 4 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 μA VDS=100V, VGS=0V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Static Drain-Source On-Resistance RDS(ON) 6.2 7 mΩ VGS=10V, ID=20A 2
Continuous Source Current IS 90 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 360 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=50A, TJ=25℃ 2
Forward Transconductance gfs 24 S VDS=10V, ID=25A 2
Gate Resistance Rg 2 Ω VDS=0V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 45 nC 2
Gate-Source Charge Qgs 12 nC 2
Gate-Drain Charge Qgd 9 nC 2
Turn-On Delay Time Td(on) 16 ns 2
Rise Time Tr 11 ns 2
Turn-Off Delay Time Td(off) 30 ns 2
Fall Time Tf 9 ns 2
Input Capacitance Ciss 3500 pF VDS=50V, VGS=0V, f=1MHz 2
Output Capacitance Coss 1250 pF VDS=50V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 80 pF VDS=50V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: CMP060N10
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: cmp060n10-etched.step / cmp060n10-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cmp060n10.step / cmp060n10.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cmos datasheet (5 pp, sha256 e659620e61d204e9, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF