component
FDC654P-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDC654P-VB
VBsemi Elec · MOSFETs · TSOP-6
FDC654P-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the P-channel MOSFET, rated for VDS = -30 V with continuous drain current of -4.8 A at TC = 25 °C and pulsed drain current of -20 A. |
| 2 | D | passive | Drain terminal of the P-channel MOSFET, rated for VDS = -30 V with continuous drain current of -4.8 A at TC = 25 °C and pulsed drain current of -20 A. |
| 3 | G | input | Gate terminal, with gate-source voltage limited to ±20 V and gate-source threshold voltage of -0.5 V to -2.0 V at ID = -250 µA. |
| 4 | S | passive | Source terminal of the P-channel MOSFET, with continuous source-drain diode current limited to -2.5 A at TC = 25 °C. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, rated for VDS = -30 V with continuous drain current of -4.8 A at TC = 25 °C and pulsed drain current of -20 A. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, rated for VDS = -30 V with continuous drain current of -4.8 A at TC = 25 °C and pulsed drain current of -20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -4.8 | A | TJ = 150 °C; TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -4.1 | A | TJ = 150 °C; TC = 70 °C | 1 | ||
| Continuous Drain Current | ID | -4 | A | TA = 25 °C; notes b, c | 1 | ||
| Continuous Drain Current | ID | -3.5 | A | TA = 70 °C; notes b, c | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | -2.5 | A | TC = 25 °C | 1 | ||
| Continuous Source-Drain Diode Current | IS | -1.67 | A | TA = 25 °C; notes b, c | 1 | ||
| Maximum Power Dissipation | PD | 3 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TA = 70 °C; notes b, c | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 55 | 62.5 | °C/W | t ≤ 5 s; notes b, d | 1 | |
| Maximum Junction-to-Ambient (steady state, from note d) | RthJA | 110 | °C/W | Steady state; note d | 1 | ||
| Maximum Junction-to-Foot (Drain) | RthJF | 34 | 41 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = -250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -0.5 | -2 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -10 | µA | VDS = -30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -20 | A | VDS ≤ -5 V, VGS = -10 V | 2 | ||
| Total Gate Charge | Qg | 10 | 15 | nC | VDS = -15 V, VGS = -10 V, ID = -4.1 A | 2 | |
| Total Gate Charge | Qg | 5.1 | 8 | nC | VDS = -15 V, VGS = -4.5 V, ID = -4.1 A | 2 | |
| Turn-On Delay Time | td(on) | 40 | 60 | ns | VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 80 | 120 | ns | VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 20 | 30 | ns | VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 12 | 20 | ns | VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -4.5 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 5 | 10 | ns | VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 13 | 20 | ns | VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 10 | 15 | ns | VDD = -15 V, RL = 4.6 Ω, ID ≅ -3.3 A, VGEN = -10 V, Rg = 1 Ω | 2 | |
| Body Diode Voltage | VSD | -0.8 | -1.2 | V | IS = -3.3 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 20 | 30 | ns | IF = -3.3 A, di/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 20 | 30 | nC | IF = -3.3 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
CAD (KiCad official)
- Symbol:
FDC654P-VB - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
fdc654p-vb-etched.step/fdc654p-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdc654p-vb.step/fdc654p-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
ec5a758c7f1db325, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).