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STW15NK90Z-VB

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VBsemi Elec MOSFETs, TO-247AC. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorstw15nk90z-vbfactory-2.0.0extractor-text

Verified STW15NK90Z-VB

by Ray · last 7 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

7 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: STW15NK90Z-VB · TO-247AC · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-247-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-7ya6uwov/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ stw15nk90z-vb.kicad_sym✓ stw15nk90z-vb.kicad_mod✓ stw15nk90z-vb.step
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3D Model

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Symbol & Footprint

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Contents

README

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STW15NK90Z-VB

VBsemi Elec · MOSFETs · TO-247AC

STW15NK90Z-VB from VBsemi Elec, in a TO-247AC. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, with VGS limited to ±30 V absolute maximum and a threshold of 2.0 to 4.0 V.
2 D passive Drain of the N-channel MOSFET, rated 900 V VDS and 20 A continuous at TC = 25 °C.
3 S passive Source of the N-channel MOSFET, connected to the body diode anode, with continuous source-drain diode current up to 15 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-247AC
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 900 V 1
Gate-source voltage VGS -30 30 V 1
Continuous drain current ID 20 A TJ = 150 °C; VGS at 10 V; TC = 25 °C 1
Continuous drain current ID 10 A TJ = 150 °C; VGS at 10 V; TC = 100 °C 1
Pulsed drain current IDM 60 A 1
Single pulse avalanche energy EAS 383 mJ VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 5.0 A 1
Maximum power dissipation PD 218 W 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Drain-source voltage slope dV/dt 70 V/ns TJ = 125 °C 1
Reverse diode dV/dt dV/dt 5.1 V/ns ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C 1
Soldering recommendations (peak temperature) 300 °C For 10 s, 1.6 mm from case 1
Maximum junction-to-ambient thermal resistance RthJA 62 °C/W 2
Drain-source breakdown voltage V(BR)DSS 900 V VGS = 0 V, ID = 250 μA 2
Gate-source threshold voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS -100 100 nA VGS = ± 20 V 2
Gate-source leakage IGSS -1 1 μA VGS = ± 30 V 2
Zero gate voltage drain current IDSS 1 μA VDS = 800 V, VGS = 0 V 2
Zero gate voltage drain current IDSS 10 μA VDS = 640 V, VGS = 0 V, TJ = 125 °C 2
Total gate charge Qg 61 122 nC VGS = 10 V, ID = 8.5 A, VDS = 480 V 2
Gate input resistance Rg 0.3 0.7 1.4 Ω f = 1 MHz, open drain 2
Rise time tr 24 48 ns VDD = 480 V, ID = 8.5 A, VGS = 10 V, Rg = 9.1 Ω 2
Turn-off delay time td(off) 71 142 ns VDD = 480 V, ID = 8.5 A, VGS = 10 V, Rg = 9.1 Ω 2
Fall time tf 26 52 ns VDD = 480 V, ID = 8.5 A, VGS = 10 V, Rg = 9.1 Ω 2
Continuous source-drain diode current IS 15 A 2
Pulsed diode forward current ISM 45 A 2
Diode forward voltage VSD 1.2 V TJ = 25 °C, IS = 8.5 A, VGS = 0 V 2
Reverse recovery time trr 416 832 ns TJ = 25 °C, IF = IS = 8.5 A, dI/dt = 100 A/μs, VR = 25 V 2
Reverse recovery charge Qrr 6.4 12.8 μC 2

CAD (KiCad official)

  • Symbol: STW15NK90Z-VB
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247AC (KiCad packages3D, STEP)
  • 3D model files: stw15nk90z-vb-etched.step / stw15nk90z-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stw15nk90z-vb.step / stw15nk90z-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 e2ad9c26b3f51a11, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF