component
STP200N3LL
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTP200N3LL
STMicroelectronics · MOSFETs · TO-220-3
STP200N3LL from STMicroelectronics, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated at ±20 V per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal, electrically connected to the TAB; drain-source voltage is rated at 30 V with continuous drain current limited by the package to 120 A. |
| 3 | S | passive | Source terminal; drain-source breakdown voltage V(BR)DSS is specified as 30 V minimum at VGS = 0 V and ID = 1 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 30 | V | 3 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 3 | ||
| Drain current (continuous), silicon limited | ID | 200 | A | Tcase = 25 °C | 3 | ||
| Drain current (continuous), package limited | ID | 120 | A | Tcase = 25 °C | 3 | ||
| Drain current (continuous) | ID | 120 | A | Tcase = 100 °C | 3 | ||
| Drain current (pulsed) | IDM | 480 | A | Pulse width is limited by safe operating area | 3 | ||
| Total dissipation | PTOT | 176.5 | W | Tcase = 25 °C | 3 | ||
| Single pulse avalanche energy | EAS | 300 | mJ | starting Tj = 25 °C, ID = 68 A | 3 | ||
| Storage temperature range | Tstg | -55 | 175 | °C | 3 | ||
| Thermal resistance junction-case | Rthj-case | 0.85 | °C/W | 3 | |||
| Thermal resistance junction-ambient | Rthj-amb | 62.5 | °C/W | 3 | |||
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | VGS = 0 V, ID = 1 mA | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 30 V | 4 | ||
| Zero gate voltage drain current at 125 °C | IDSS | 10 | µA | VGS = 0 V, VDS = 30 V, Tcase = 125 °C(1) | 4 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 4 | |
| Gate threshold voltage | VGS(th) | 1 | 2.5 | V | VDS = VGS, ID = 250 µA | 4 | |
| Static drain-source on-resistance | RDS(on) | 2.15 | 2.4 | mΩ | VGS = 10 V, ID = 60 A | 4 | |
| Static drain-source on-resistance | RDS(on) | 2.5 | 3.1 | mΩ | VGS = 4.5 V, ID = 60 A | 4 |
CAD (KiCad official)
- Symbol:
STP200N3LL - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3 (KiCad packages3D, STEP)
- 3D model files:
stp200n3ll-etched.step/stp200n3ll-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp200n3ll.step/stp200n3ll.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (13 pp, sha256
da3c55c2a1a055c0, retrieved 2026-11-06, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).