component
HESDL3V3LB-TP
Public Made by Adomby adom
HXY MOSFET ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHESDL3V3LB-TP
HXY MOSFET · ESD And Surge Protection (TVS/ESD) · DFN1006-2L
HESDL3V3LB-TP from HXY MOSFET, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | 1 | passive | Bi-directional ESD protection line (I/O) protecting one line, 3.3V working voltage, IEC 61000-4-2 ±8kV contact / ±15kV air. |
| 2 | 2 | passive | Second terminal of the bi-directional ESD diode, connected to the other side of the protected line or ground, 3.3V reverse working voltage. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak Pulse Power | PPP | 84 | W | tp = 8/20 μs | 1 | ||
| IEC61000-4-4 (EFT) current | 40 | A | IEC61000-4-4 (EFT) | 1 | |||
| ESD air discharge (IEC61000-4-2) | 15 | kV | IEC61000-4-2 air discharge | 1 | |||
| ESD contact discharge (IEC61000-4-2) | 8 | kV | IEC61000-4-2 contact discharge | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Maximum lead temperature for soldering | TL | 260 | °C | during 10 s | 1 | ||
| Maximum junction temperature | Tj | 150 | °C | 1 | |||
| Reverse Breakdown Voltage | VBR | 3.6 | V | IT = 1 mA | 2 | ||
| Reverse Working Voltage | VRWM | 3.3 | V | 2 | |||
| Reverse Leakage Current | IR | 1 | μA | VRWM = 3.3 V | 2 | ||
| Clamping Voltage | VC | 8 | V | IRWM = 1 A, tp = 8/20 μs | 2 | ||
| Clamping Voltage | VC | 12 | V | IRWM = 7 A, tp = 8/20 μs | 2 | ||
| Junction Capacitance | CJ | 15 | pF | VR = 0 V, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
HESDL3V3LB-TP - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
hesdl3v3lb-tp-etched.step/hesdl3v3lb-tp-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hesdl3v3lb-tp.step/hesdl3v3lb-tp.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
e7b74436ea3c5ead, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).