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Contents

README

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PMV100XPEAR

Nexperia · MOSFETs · SOT-23

PMV100XPEAR from Nexperia, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; the gate-source voltage VGS is limited to -12 V to 12 V (Tj = 25 °C).
2 S passive Source of the MOSFET; the source current IS is limited to -1 A at Tamb = 25 °C.
3 D passive Drain of the MOSFET; the drain-source voltage VDS is limited to -20 V.

Key specifications

Parameter Value
Manufacturer Nexperia
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -20 V 3
Gate-source voltage VGS -12 12 V Tj = 25 °C 3
Drain current ID -2.4 A VGS = -4.5 V; Tamb = 25 °C 3
Drain current ID -1.5 A VGS = -4.5 V; Tamb = 100 °C 3
Peak drain current IDM -10 A Tamb = 25 °C; single pulse; tp ≤ 10 µs 3
Non-repetitive drain-source avalanche energy EDS(AL)S 5 mJ Tj(init) = 25 °C; ID = -0.5 A; DUT in avalanche (unclamped) 3
Total power dissipation Ptot 463 mW Tamb = 25 °C [2]; FR4 PCB, single-sided copper, standard footprint 3
Total power dissipation Ptot 1.06 W [1] FR4 PCB, single-sided copper, mounting pad for drain 6 cm2 3
Total power dissipation Ptot 4.45 W Tsp = 25 °C 3
Junction temperature Tj -55 150 °C 3
Ambient temperature Tamb -55 150 °C 3
Storage temperature Tstg -65 150 °C 3
Source current IS -1 A Tamb = 25 °C [1] 3
Electrostatic discharge voltage VESD 2000 V HBM; measured between all pins [3] 3
Thermal resistance from junction to ambient Rth(j-a) 226 270 K/W in free air; [1] FR4 PCB, single-sided copper, tin-plated and standard footprint 5
Thermal resistance from junction to ambient Rth(j-a) 98 118 K/W in free air; [2] FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2 5
Thermal resistance from junction to solder point Rth(j-sp) 20 28 K/W 5
Drain-source breakdown voltage V(BR)DSS -20 V ID = -250 µA; VGS = 0 V; Tj = 25 °C 6
Gate-source threshold voltage VGSth -0.75 -1 -1.25 V ID = -250 µA; VDS = VGS; Tj = 25 °C 6
Drain leakage current IDSS -1 µA VDS = -20 V; VGS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 10 µA VGS = 12 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -10 µA VGS = -12 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS 2 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C 6
Gate leakage current IGSS -2 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C 6
Drain-source on-state resistance RDSon 97 128 mΩ VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C 6
Drain-source on-state resistance RDSon 142 187 mΩ VGS = -4.5 V; ID = -2.4 A; Tj = 150 °C 6
Drain-source on-state resistance RDSon 147 210 mΩ VGS = -2.5 V; ID = -1.9 A; Tj = 25 °C 6
Total gate charge QG(tot) 3.4 6 nC VDS = -10 V; ID = -2.4 A; VGS = -4.5 V; Tj = 25 °C 6
Source-drain voltage VSD -0.7 -1.2 V IS = -1 A; VGS = 0 V; Tj = 25 °C 6

CAD (KiCad official)

  • Symbol: PMV100XPEAR
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: pmv100xpear-etched.step / pmv100xpear-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pmv100xpear.step / pmv100xpear.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Nexperia datasheet (15 pp, sha256 ad02970ae2a84ef6, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF