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SP025N18GHTQ

Public Made by Adom

by adom

Siliup MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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SP025N18GHTQ

Siliup · MOSFETs · TO-220-3L

SP025N18GHTQ from Siliup, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold of 3.2 V min to 4.2 V max at ID=250uA.
2 D passive Drain; drain-source voltage rated 250 V with continuous drain current of 85 A at Tc=25℃.
3 S passive Source; source terminal of the N-channel MOSFET, body-diode continuous current up to 85 A.

Key specifications

Parameter Value
Manufacturer Siliup
Package TO-220-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 250 V VGS=0V, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=200V, VGS=0V, TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 3.2 3.6 4.2 V VGS=VDS, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 18 23 mΩ VGS=10V, ID=20A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Maximum Body-Diode Continuous Current IS 85 A 2
Drain-Source Voltage VDS 250 V Ta=25℃ 2
Gate-Source Voltage VGS -20 20 V Ta=25℃ 2
Continuous Drain Current ID 85 A Tc=25℃ 2
Continuous Drain Current ID 57 A Tc=100℃ 2
Pulsed Drain Current IDM 340 A 2
Single Pulse Avalanche Energy EAS 841 mJ VDD=75V, VGS=10V, L=0.5mH, RG=25Ω 2
Power Dissipation PD 280 W Tc=25℃ 2
Power Dissipation PD 112 W Tc=100℃ 2
Storage Temperature Range TSTG -55 150 ℃ 2
Operating Junction Temperature Range TJ -55 150 ℃ 2
Thermal Resistance Junction-to-Case RθJC 0.45 ℃/W 2
Gate Resistance RG 3.7 Ω VDS=125V, VGS=0V, f=1MHz 2
Input Capacitance Ciss 9824 pF VDS=125V, VGS=0V, f=1MHz 2
Output Capacitance Coss 290 pF VDS=125V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 18 pF VDS=125V, VGS=0V, f=1MHz 2
Total Gate Charge Qg 132 nC VDS=125V, VGS=10V, ID=20A 2
Gate-Source Charge Qgs 48 nC VDS=125V, VGS=10V, ID=20A 2
Gate-Drain Charge Qgd 24 nC VDS=125V, VGS=10V, ID=20A 2
Gate Plateau Voltage Vplateau 5.2 V VDS=125V, VGS=10V, ID=20A 2
Turn-On Delay Time Td(on) 26 nS VDD=125V, VGS=10V, RG=10Ω, ID=20A 2
Rise Time Tr 68 nS VDD=125V, VGS=10V, RG=10Ω, ID=20A 2
Turn-Off Delay Time Td(off) 76 nS VDD=125V, VGS=10V, RG=10Ω, ID=20A 2
Fall Time Tf 58 nS VDD=125V, VGS=10V, RG=10Ω, ID=20A 2
Reverse Recovery Time Trr 132 nS IS=20A, di/dt=200A/us, TJ=25℃ 2
Reverse Recovery Charge Qrr 406 nC IS=20A, di/dt=200A/us, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: SP025N18GHTQ
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3L (KiCad packages3D, STEP)
  • 3D model files: sp025n18ghtq-etched.step / sp025n18ghtq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sp025n18ghtq.step / sp025n18ghtq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Siliup datasheet (7 pp, sha256 89e073727610a892, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF