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Contents

README

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AOD4185-ES

ElecSuper · MOSFETs · TO-252

AOD4185-ES from ElecSuper, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel MOSFET; the datasheet rates the gate-source voltage VGS at ±25 V.
2 Drain passive Drain terminal of the P-channel MOSFET; the datasheet rates the drain-source voltage BVDSS at -40 V and the continuous drain current ID at -45 A at TC=25°C.
3 Source passive Source terminal of the P-channel MOSFET; the datasheet gives its electrical characteristics with respect to VGS=0V and VDS, with the drain-source voltage rated at -40 V.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS -40 V 2
Gate-Source Voltage VGS -25 25 V 2
Continuous Drain Current ID -45 A TC=25°C 2
Continuous Drain Current ID -34 A TC=75°C 2
Maximum Power Dissipation PD 52 W TC=25°C 2
Maximum Power Dissipation PD 32 W TC=75°C 2
Pulsed Drain Current IDM -180 A Repetitive rating, pulse width limited by junction temperature, tp=10μs, Duty Cycle=1% 2
Avalanche Current, Single Pulsed IAS -33 A EAS condition: Tj=25℃, VDD=-30V, VG=-10V, L=0.3mH, Rg=25Ω 2
Avalanche Energy, Single Pulsed EAS 163 mJ EAS condition: Tj=25℃, VDD=-30V, VG=-10V, L=0.3mH, Rg=25Ω 2
Operating Junction Temperature TJ 150 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Drain-to-Source Breakdown Voltage BVDSS -40 V VGS=0V, ID=-250uA 3
Zero Gate Voltage Drain Current IDSS -1 uA VGS=0V, VDS=-40V 3
Gate-to-source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 3
Gate Threshold Voltage VGS(TH) -1 -1.6 -2 V VGS=VDS, ID=-250uA 3
Drain-to-source On-resistance RDS(on) 13 16 mΩ VGS=-10V, ID=-20A 3
Drain-to-source On-resistance RDS(on) 17 20 mΩ VGS=-4.5V, ID=-15A 3
Forward Voltage VSD -0.7 -1.5 V VGS=0V, ISD=-1A 3
Junction-to-Ambient Thermal Resistance RθJA 15 20 °C/W t ≤ 10 s 2
Junction-to-Case Thermal Resistance RθJC 2 2.4 °C/W Steady State 2
Input Capacitance CISS 2500 pF VGS=0V, VDS=-15V, f=1MHz 3
Output Capacitance COSS 260 pF VGS=0V, VDS=-15V, f=1MHz 3
Reverse Transfer Capacitance CRSS 180 pF VGS=0V, VDS=-15V, f=1MHz 3
Total Gate Charge QG(TOT) 42 nC VGS=-10V, VDS=-15V, ID=-20A 3
Gate-to-Source Charge QGS 7 nC VGS=-10V, VDS=-15V, ID=-20A 3
Gate-to-Drain Charge QGD 8.8 nC VGS=-10V, VDS=-15V, ID=-20A 3
Turn-On Delay Time td(ON) 10 ns VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω 3
Rise Time tr 20 ns VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω 3
Turn-Off Delay Time td(OFF) 55 ns VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω 3
Fall Time tf 30 ns VGS=-10V, VDS=-15V, RL=1Ω, RG=3Ω 3

CAD (KiCad official)

  • Symbol: AOD4185-ES
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: aod4185-es-etched.step / aod4185-es-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); aod4185-es.step / aod4185-es.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (8 pp, sha256 c573b5e898d5b15f, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF