component
BSL308CH6327XTSA1
Public Made by Adomby adom
Infineon Technologies MOSFETs, TSOP-6. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownBSL308CH6327XTSA1
Infineon Technologies · MOSFETs · TSOP-6
BSL308CH6327XTSA1 from Infineon Technologies, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the first transistor (left symbol); VGS max ±20 V, logic level rated at 4.5 V. |
| 2 | S2 | passive | Source of the second transistor (right symbol); continuous drain current is -2.0 A (P) or 2.3 A (N) at TA=25 °C. |
| 3 | G2 | input | Gate of the second transistor (right symbol); VGS max ±20 V, logic level rated at 4.5 V. |
| 4 | D2 | passive | Drain of the second transistor (right symbol); VDS of -30 V (P) or 30 V (N). |
| 5 | S1 | passive | Source of the first transistor (left symbol); continuous drain current is -2.0 A (P) or 2.3 A (N) at TA=25 °C. |
| 6 | D1 | passive | Drain of the first transistor (left symbol); VDS of -30 V (P) or 30 V (N). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current P-channel (TA=25 °C) | ID | -2 | A | TA=25 °C | 1 | ||
| Continuous drain current N-channel (TA=25 °C) | ID | 2.3 | A | TA=25 °C | 1 | ||
| Continuous drain current P-channel (TA=70 °C) | ID | -1.6 | A | TA=70 °C | 1 | ||
| Continuous drain current N-channel (TA=70 °C) | ID | 1.8 | A | TA=70 °C | 1 | ||
| Pulsed drain current P-channel | ID,pulse | -8 | A | TA=25 °C | 1 | ||
| Pulsed drain current N-channel | ID,pulse | 9 | A | TA=25 °C | 1 | ||
| Avalanche energy, single pulse P-channel | EAS | 10.7 | mJ | ID=-2.0 A, RGS=25 Ω | 1 | ||
| Avalanche energy, single pulse N-channel | EAS | 10.8 | mJ | ID=2.3 A, RGS=25 Ω | 1 | ||
| Gate source voltage | VGS | -20 | 20 | V | 1 | ||
| Power dissipation | Ptot | 0.5 | W | TA=25 °C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Soldering temperature | Tsolder | 260 | °C | 1 | |||
| Thermal resistance, junction - ambient (minimal footprint) | RthJA | 250 | K/W | minimal footprint | 2 | ||
| Drain-source breakdown voltage P-channel | V(BR)DSS | -30 | V | VGS=0 V, ID=-250 µA | 2 | ||
| Drain-source breakdown voltage N-channel | V(BR)DSS | 30 | V | VGS=0 V, ID=250 µA | 2 | ||
| Gate threshold voltage P-channel | VGS(th) | -2 | -1.5 | -1 | V | VDS=VGS, ID=-11 µA | 2 |
| Gate threshold voltage N-channel | VGS(th) | 1.2 | 1.6 | 2 | V | VDS=VGS, ID=11 µA | 2 |
| Zero gate voltage drain current P-channel | IDSS | -1 | µA | VDS=-30 V, VGS=0 V, Tj=25 °C | 2 | ||
| Zero gate voltage drain current N-channel | IDSS | 1 | µA | VDS=30 V, VGS=0 V, Tj=25 °C | 2 | ||
| Zero gate voltage drain current P-channel | IDSS | -100 | µA | VDS=-30 V, VGS=0 V, Tj=150 °C | 2 | ||
| Zero gate voltage drain current N-channel | IDSS | 100 | µA | VDS=30 V, VGS=0 V, Tj=150 °C | 2 | ||
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS=±20 V, VDS=0 V | 2 | |
| Drain-source on-state resistance P-channel | RDS(on) | 88 | 130 | mW | VGS=-4.5 V, ID=-1.7 A | 2 | |
| Drain-source on-state resistance N-channel | RDS(on) | 67 | 93 | mW | VGS=4.5 V, ID=1.85 A | 2 | |
| Drain-source on-state resistance P-channel | RDS(on) | 62 | 80 | mW | VGS=-10 V, ID=-2.0 A | 2 | |
| Drain-source on-state resistance N-channel | RDS(on) | 44 | 57 | mW | VGS=10 V, ID=2.3 A | 2 | |
| Input capacitance P-channel | Ciss | 376 | 500 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 | |
| Input capacitance N-channel | Ciss | 207 | 275 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 | |
| Output capacitance P-channel | Coss | 196 | 261 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 | |
| Output capacitance N-channel | Coss | 75 | 100 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 | |
| Reverse transfer capacitance P-channel | Crss | 12 | 18 | pF | VGS=0 V, VDS=-15 V, f=1 MHz | 3 | |
| Reverse transfer capacitance N-channel | Crss | 12 | 17 | pF | VGS=0 V, VDS=15 V, f=1 MHz | 3 | |
| Diode continuous forward current P-channel | IS | -0.4 | A | TC=25 °C | 4 | ||
| Diode continuous forward current N-channel | IS | 0.5 | A | TC=25 °C | 4 | ||
| Diode pulse current P-channel | IS,pulse | -8.4 | A | 4 | |||
| Diode pulse current N-channel | IS,pulse | 9 | A | 4 | |||
| Diode forward voltage P-channel | VSD | -0.8 | -1.1 | V | VGS=0 V, IF=-2 A, Tj=25 °C | 4 | |
| Diode forward voltage N-channel | VSD | 0.83 | 1.1 | V | VGS=0 V, IF=2.3 A, Tj=25 °C | 4 |
CAD (KiCad official)
- Symbol:
BSL308CH6327XTSA1 - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
bsl308ch6327xtsa1-etched.step/bsl308ch6327xtsa1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsl308ch6327xtsa1.step/bsl308ch6327xtsa1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (13 pp, sha256
76a4f64953ff2bf4, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).