component
FNK10N25B-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownFNK10N25B-VB
VBsemi Elec · MOSFETs · TSSOP-8
FNK10N25B-VB from VBsemi Elec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain pin shared by both N-channel MOSFETs (pins 1 and 8 are the common drain), VDS rated 30 V. |
| 2 | S1 | passive | Source of MOSFET 1. |
| 3 | S1 | passive | Source of MOSFET 1. |
| 4 | G1 | input | Gate of MOSFET 1, VGS rated ±20 V absolute maximum. |
| 5 | G2 | input | Gate of MOSFET 2, VGS rated ±20 V absolute maximum. |
| 6 | S2 | passive | Source of MOSFET 2. |
| 7 | S2 | passive | Source of MOSFET 2. |
| 8 | D | passive | Drain pin shared by both N-channel MOSFETs (pins 1 and 8 are the common drain), VDS rated 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | TA = 25 °C, unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C, unless otherwise noted | 1 | |
| Continuous Drain Current (TJ = 150 °C), TA = 25 °C, t ≤ 10 s | ID | 8.6 | A | TA = 25 °C, 10 s | 1 | ||
| Continuous Drain Current (TJ = 150 °C), TA = 25 °C, steady state | ID | 7.2 | A | TA = 25 °C, steady state | 1 | ||
| Continuous Drain Current (TJ = 150 °C), TA = 70 °C, t ≤ 10 s | ID | 7.5 | A | TA = 70 °C, 10 s | 1 | ||
| Continuous Drain Current (TJ = 150 °C), TA = 70 °C, steady state | ID | 5.5 | A | TA = 70 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | TA = 25 °C, unless otherwise noted | 1 | ||
| Continuous Source Current (Diode Conduction), t ≤ 10 s | IS | 1.5 | A | TA = 25 °C, 10 s | 1 | ||
| Continuous Source Current (Diode Conduction), steady state | IS | 1 | A | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation, TA = 25 °C, t ≤ 10 s | PD | 1.6 | W | TA = 25 °C, 10 s | 1 | ||
| Maximum Power Dissipation, TA = 25 °C, steady state | PD | 1.2 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation, TA = 70 °C, t ≤ 10 s | PD | 0.98 | W | TA = 70 °C, 10 s | 1 | ||
| Maximum Power Dissipation, TA = 70 °C, steady state | PD | 0.67 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Gate Threshold Voltage | VGS(th) | 1.5 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -200 | 200 | nA | VDS = 0 V, VGS = ± 10 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current, TJ = 70 °C | IDSS | 25 | µA | VDS = 30 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-State Drain Current | ID(on) | 30 | A | VDS ≤ 5 V, VGS = 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.012 | Ω | VGS = 10 V, ID = 8.5 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.019 | Ω | VGS = 4.5 V, ID = 7.5 A | 2 | ||
| Forward Transconductance | gfs | 30 | S | VDS = 15 V, ID = 6.5 A | 2 | ||
| Diode Forward Voltage | VSD | 0.71 | 1.2 | V | IS = 1.5 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 13 | nC | VDS = 15 V, VGS = 4.5 V, ID = 6.5 A | 2 | ||
| Gate-Source Charge | Qgs | 2.2 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 3.6 | nC | 2 | |||
| Turn-On Delay Time | td(on) | 245 | 365 | ns | VDD = 15 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω | 2 | |
| Rise Time | tr | 330 | 495 | ns | VDD = 15 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 860 | 1300 | ns | VDD = 15 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω | 2 | |
| Fall Time | tf | 510 | 765 | ns | VDD = 15 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω | 2 | |
| Thermal Resistance, Junction-to-Ambient, t ≤ 10 s | RthJA | 72 | 83 | °C/W | t ≤ 10 s, surface mounted on FR4 board | 1 | |
| Thermal Resistance, Junction-to-Ambient, steady state | RthJA | 100 | 120 | °C/W | steady state, surface mounted on FR4 board | 1 | |
| Thermal Resistance, Junction-to-Foot (Drain), steady state | RthJF | 55 | 70 | °C/W | steady state | 1 |
CAD (KiCad official)
- Symbol:
FNK10N25B-VB - Footprint:
Package_SO:TSSOP-8_3x3mm_P0.65mm - 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files:
fnk10n25b-vb-etched.step/fnk10n25b-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fnk10n25b-vb.step/fnk10n25b-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
a804e5da98dfa290, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).