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NCE0130A
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Wuxi NCE Power Semiconductor MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCE0130A
Wuxi NCE Power Semiconductor · MOSFETs · TO-220F-3
NCE0130A from Wuxi NCE Power Semiconductor, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with Vgs(th) 1.3 to 2.5 V at 250 µA. |
| 2 | D | passive | Drain; VDS 100 V max, continuous ID 30 A at TC=25°C and 120 A pulsed, also connected to the tab. |
| 3 | S | passive | Source; body-diode forward current IS 30 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | 115 | V | VGS=0V ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.3 | 1.9 | 2.5 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 25 | 32 | mΩ | VGS=10V, ID=10A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=10A | 2 | ||
| Diode Forward Current | IS | 30 | A | 2 | |||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 30 | A | 1 | |||
| Drain Current-Continuous | ID(100℃) | 21 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 120 | A | Note 1 (repetitive rating, pulse width limited by maximum junction temperature) | 1 | ||
| Maximum Power Dissipation | PD | 85 | W | 1 | |||
| Single pulse avalanche energy | EAS | 200 | mJ | Note 5: Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω | 1 | ||
| VDS Spike | VDS | 120 | V | 10μs | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.8 | ℃/W | Note 2 (surface mounted on FR4 board, t ≤ 10 sec) | 1 |
CAD (KiCad official)
- Symbol:
NCE0130A - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
ba8794c04181b3b3, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).