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Contents

README

markdown

MP2303ADN-LF-Z

Monolithic Power Systems · DC-DC Converters · SOIC-8-EP

MP2303ADN-LF-Z from Monolithic Power Systems, in a SOIC-8-EP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BS power_in High-side gate drive boost input that supplies the high-side N-channel MOSFET drive; connect a 0.01µF or greater capacitor from SW to BS.
2 IN power_in Power input that supplies the IC and the step-down converter switches; drive with a 4.7V to 28V source and bypass to GND with a suitably large capacitor.
3 SW power_out Power switching output that supplies power to the output through the LC filter; a capacitor is required from SW to BS to power the high-side switch.
4 GND power_in Ground; the exposed pad must be connected to pin 4.
5 FB input Feedback input that senses the output through a resistive divider, with a feedback threshold of 0.80V.
6 COMP passive Compensation node for the control loop, connected through a series RC network to GND, with an additional capacitor sometimes required.
7 EN input Enable input that turns the regulator on when driven high and off when driven low; it must not be left floating and should not exceed 6V.
8 SS passive Soft-start control input where a capacitor to GND sets the soft-start period (0.1µF gives 15ms), and leaving it unconnected disables soft-start.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Monolithic Power Systems
Package SOIC-8-EP
Category Power Management (PMIC)
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VIN -0.3 30 V 2
All Other Pins -0.3 6 V 2
Junction Temperature 150 °C 2
Continuous Power Dissipation SOIC8E 2.5 W TA = +25°C 2
Lead Temperature 260 °C 2
Storage Temperature -65 150 °C 2
Input Voltage VIN 4.7 28 V 2
Output Voltage VOUT 0.8 25 V 2
Maximum Junction Temperature TJ 125 °C 2
Thermal Resistance Junction-to-Ambient SOIC8E θJA 50 C/W JESD51-7, 4-layer PCB 2
Thermal Resistance Junction-to-Case SOIC8E θJC 10 C/W 2
Feedback Voltage VFB 0.78 0.8 0.82 V 4.7V ≤ VIN ≤ 28V, TA = +25°C 3
Feedback Voltage VFB 0.765 0.835 V -40°C ≤ TA ≤ +85°C 3
OVP Threshold Voltage 0.9 0.95 1 V 3
Error Amplifier Transconductance GEA 550 820 1100 μA/V IC = 10μA 3
Shutdown Supply Current 0.3 3 μA VEN = 0V 3
Supply Current 1.45 1.6 mA VEN = 2.7V, VFB = 1.0V 3
High-Side Switch Leakage Current 0 10 μA VEN = 0V, VSW = 0V 3
Upper Switch Current Limit 4.3 6 A 3
Oscillation Frequency Fosc1 310 360 410 kHz TA = +25°C 3
Oscillation Frequency Fosc1 290 430 kHz -40°C ≤ TA ≤ +85°C 3
Maximum Duty Cycle DMAX 85 90 % VFB = 0.7V 3
EN Shutdown Threshold Voltage VEN 1 1.3 1.6 V VEN Rising 3
Input Under Voltage Lockout Threshold UVLO 3.6 3.95 4.3 V VIN rising, TA = +25°C 3
Input Under Voltage Lockout Threshold UVLO 3.2 4.5 V 0°C ≤ TA ≤ +70°C 3

CAD (KiCad official)

  • Symbol: MP2303ADN-LF-Z
  • Footprint: Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.29x3mm
  • 3D model: SOIC-8-EP (KiCad packages3D, STEP)
  • 3D model files: mp2303adn-lf-z-etched.step / mp2303adn-lf-z-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mp2303adn-lf-z.step / mp2303adn-lf-z.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Monolithic Power Systems datasheet (15 pp, sha256 d3d096df1691b37f, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF