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2SC2625L-T3P-T

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UTC(Unisonic Tech) Bipolar (BJT), TO-3P. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Contents

README

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2SC2625L-T3P-T

UTC(Unisonic Tech) · Bipolar (BJT) · TO-3P

2SC2625L-T3P-T from UTC(Unisonic Tech), in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the NPN transistor, with base current IB rated at 3 A in the absolute maximum ratings.
2 C passive Collector terminal of the NPN transistor, with collector current IC rated at 10 A and collector-emitter voltage VCEO at 400 V.
3 E passive Emitter terminal of the NPN transistor, with emitter-base voltage VEBO rated at 7 V.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package TO-3P
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Base Voltage VCBO 450 V 2
Collector Emitter Voltage VCEO 400 V 2
Collector Emitter Sustaining Voltage VCEO(SUS) 400 V 2
Emitter Base Voltage VEBO 7 V 2
Collector Current IC 10 A 2
Base Current IB 3 A 2
Power Dissipation TO-3P/TO-3PB PD 80 W TO-3P/TO-3PB 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -40 150 °C 2
Junction to Case Thermal Resistance TO-3P/TO-3PB θjC 1.55 °С/W TO-3P/TO-3PB 2
Collector Base Voltage VCBO 450 V ICBO=1mA 2
Collector Emitter Voltage VCEO 400 V ICEO=10mA 2
Collector Emitter Sustaining Voltage VCEO (SUS) 400 V IC=1A 2
Emitter Base Voltage VEBO 7 V IEBO=0.1mA 2
Collector-Emitter Saturation Voltage VCE (Sat) 1.2 V IC=4A, IB=0.8A 2
Base Emitter Saturation Voltage VBE (Sat) 1.5 V 2
Collector Cut-off Current ICBO 1 mA VCBO=450V 2
Emitter Cut-off Current IEBO 0.1 mA VEBO=7V 2
DC Current Gain hFE 10 IC=4A, VCE=5V 2
Turn-on Time tON 1 μs IC=7.5A, IB1=-IB2=1.5A RL=20Ω, Pw=20μs, Duty ≤ 2% 2
Storage Time tSTG 2 μs IC=7.5A, IB1=-IB2=1.5A RL=20Ω, Pw=20μs, Duty ≤ 2% 2
Fall Time tF 1 μs IC=7.5A, IB1=-IB2=1.5A RL=20Ω, Pw=20μs, Duty ≤ 2% 2

CAD (KiCad official)

  • Symbol: 2SC2625L-T3P-T
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3P (KiCad packages3D, STEP)
  • 3D model files: 2sc2625l-t3p-t-etched.step / 2sc2625l-t3p-t-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sc2625l-t3p-t.step / 2sc2625l-t3p-t.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256 db75f3f5da9b06dc, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF