component
IRF7809AVTR
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7809AVTR
UMW · MOSFETs · SOP-8
IRF7809AVTR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; pins 1, 2 and 3 are all listed as SOURCE in the pinning table. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; pins 1, 2 and 3 are all listed as SOURCE in the pinning table. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; pins 1, 2 and 3 are all listed as SOURCE in the pinning table. |
| 4 | G | input | Gate terminal; the datasheet specifies gate-source voltage limits of ±12V (VGS) in the absolute maximum ratings. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET; pins 5 through 8 are all listed as DRAIN, with device VDS rated 30V. |
| 6 | D | passive | Drain terminal of the N-channel MOSFET; pins 5 through 8 are all listed as DRAIN, with device VDS rated 30V. |
| 7 | D | passive | Drain terminal of the N-channel MOSFET; pins 5 through 8 are all listed as DRAIN, with device VDS rated 30V. |
| 8 | D | passive | Drain terminal of the N-channel MOSFET; pins 5 through 8 are all listed as DRAIN, with device VDS rated 30V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250µA, VGS=0V | 3 | ||
| Static Drain-Source on Resistance | RDS(ON) | 7 | mΩ | VGS=4.5V, ID=15A | 3 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V | 3 | |
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current, VGS≥4.5V | ID | 15 | A | TA=25°C | 1 | ||
| Pulsed Drain Current | IDM | 100 | A | Repetitive rating; pulse width limited by max. junction temperature | 1 | ||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 50 | °C/W | Mounted on 1 inch square copper board, t<10 sec | 2 | ||
| Maximum Junction-to-Lead | RθJL | 20 | °C/W | 2 |
CAD (KiCad official)
- Symbol:
IRF7809AVTR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7809avtr-etched.step/irf7809avtr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7809avtr.step/irf7809avtr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (12 pp, sha256
7e73ddc2bb7f6523, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).