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WSD30L120DN56
Public Made by Adomby adom
Winsok Semicon MOSFETs, DFN5X6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWSD30L120DN56
Winsok Semicon · MOSFETs · DFN5X6-8
WSD30L120DN56 from Winsok Semicon, in a DFN5X6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; one of three source pins, with VDS rated -30 V and continuous drain current -120 A at TC=25℃. |
| 2 | S | passive | Source of the P-channel MOSFET; one of three source pins, with VDS rated -30 V and continuous drain current -120 A at TC=25℃. |
| 3 | S | passive | Source of the P-channel MOSFET; one of three source pins, with VDS rated -30 V and continuous drain current -120 A at TC=25℃. |
| 4 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated ±20 V, with a threshold of -1.2 to -2.5 V at ID=-250uA. |
| 5 | D | passive | Drain of the P-channel MOSFET, shorted with pins 6-8 and the exposed drain pad; drain-source voltage is rated -30 V. |
| 6 | D | passive | Drain of the P-channel MOSFET, shorted with pins 5, 7, 8 and the exposed drain pad; drain-source voltage is rated -30 V. |
| 7 | D | passive | Drain of the P-channel MOSFET, shorted with pins 5, 6, 8 and the exposed drain pad; drain-source voltage is rated -30 V. |
| 8 | D | passive | Drain of the P-channel MOSFET, shorted with pins 5-7 and the exposed drain pad; drain-source voltage is rated -30 V. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | DFN5X6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (TC=25℃) | ID | -120 | A | VGS @ -10V | 1 | ||
| Continuous Drain Current (TC=100℃) | ID | -76 | A | VGS @ -10V | 1 | ||
| Continuous Drain Current (TA=25℃), 10s | ID | -27 | A | VGS @ -10V; 10s column | 1 | ||
| Continuous Drain Current (TA=25℃), steady state | ID | -22 | A | VGS @ -10V; steady state column | 1 | ||
| Continuous Drain Current (TA=70℃), 10s | ID | -24 | A | VGS @ -10V; 10s column | 1 | ||
| Continuous Drain Current (TA=70℃), steady state | ID | -19 | A | VGS @ -10V; steady state column | 1 | ||
| Pulsed Drain Current | IDM | -400 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 324 | mJ | 1 | |||
| Avalanche Current | IAS | -36 | A | 1 | |||
| Total Power Dissipation (TC=25℃) | PD | 78 | W | 1 | |||
| Total Power Dissipation (TA=25℃), 10s | PD | 6.8 | W | 10s column | 1 | ||
| Total Power Dissipation (TA=25℃), steady state | PD | 6.25 | W | steady state column | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 55 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient (10s) | RθJA | 20 | ℃/W | t ≤10s | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.6 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 2.9 | 3.6 | mΩ | VGS=-10V, ID=-30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5 | 6.8 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.5 | -2.5 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current (TJ=25℃) | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current (TJ=55℃) | IDSS | -5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Gate Resistance | Rg | 2 | 5 | Ω | VDS=0V, VGS=0V, f=1MHz | 2 | |
| Single Pulse Avalanche Energy | EAS | 300 | mJ | VDD=-25V, L=0.5mH, IAS=-36A | 2 | ||
| Continuous Source Current | IS | -40 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | -400 | A | 2 | |||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
WSD30L120DN56 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5X6-8 (KiCad packages3D, STEP)
- 3D model files:
wsd30l120dn56-etched.step/wsd30l120dn56-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsd30l120dn56.step/wsd30l120dn56.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
2805493212f274a4, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).