component
FDPF20N50FT
Public Made by Adomby adom
onsemi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDPF20N50FT
onsemi · MOSFETs · TO-220
FDPF20N50FT from onsemi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±30 V maximum and threshold of 3.0 to 5.0 V. |
| 2 | D | passive | Drain; rated 500 V drain-to-source with 20 A continuous current at TC = 25°C. |
| 3 | S | passive | Source; connects to the body diode anode and the load return side. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | TO-220 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | BVDSS | 500 | V | ID = 250µA, VGS = 0V, TJ = 25°C | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 500V, VGS = 0V | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | µA | VDS = 400V, TC = 125°C | 3 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VGS = ±30V, VDS = 0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 3 | 5 | V | VGS = VDS, ID = 250µA | 3 | |
| Static Drain to Source On Resistance | RDS(on) | 0.22 | 0.26 | Ω | VGS = 10V, ID = 10A | 3 | |
| Input Capacitance | Ciss | 2550 | 3390 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 3 | |
| Output Capacitance | Coss | 350 | 465 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 27 | 40 | pF | VDS = 25V, VGS = 0V, f = 1MHz | 3 | |
| Total Gate Charge at 10V | Qg(tot) | 50 | 65 | nC | VDS = 400V, ID = 20A, VGS = 10V | 3 | |
| Turn-On Delay Time | td(on) | 45 | 100 | ns | VDD = 250V, ID = 20A, RG = 25Ω | 3 | |
| Turn-On Rise Time | tr | 120 | 250 | ns | VDD = 250V, ID = 20A, RG = 25Ω | 3 | |
| Turn-Off Delay Time | td(off) | 100 | 210 | ns | VDD = 250V, ID = 20A, RG = 25Ω | 3 | |
| Turn-Off Fall Time | tf | 60 | 130 | ns | VDD = 250V, ID = 20A, RG = 25Ω | 3 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | 20 | A | 3 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | 80 | A | 3 | |||
| Drain to Source Diode Forward Voltage | VSD | 1.5 | V | VGS = 0V, ISD = 20A | 3 | ||
| Drain to Source Voltage | VDSS | 500 | V | TC = 25°C | 2 | ||
| Gate to Source Voltage | VGSS | -30 | 30 | V | TC = 25°C | 2 | |
| Drain Current - Continuous | ID | 20 | A | TC = 25°C; limited by maximum junction temperature | 2 | ||
| Drain Current - Continuous | ID | 12.9 | A | TC = 100°C; limited by maximum junction temperature | 2 | ||
| Drain Current - Pulsed | IDM | 80 | A | Note 1; limited by maximum junction temperature | 2 | ||
| Single Pulsed Avalanche Energy | EAS | 1110 | mJ | Note 2 | 2 | ||
| Avalanche Current | IAR | 20 | A | Note 1 | 2 | ||
| Repetitive Avalanche Energy | EAR | 25 | mJ | Note 1 | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | 20 | V/ns | Note 3 | 2 | ||
| Power Dissipation | PD | 38.5 | W | TC = 25°C | 2 | ||
| Power Dissipation Derate above 25°C | PD | 0.3 | W/°C | Derate above 25°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Maximum Lead Temperature for Soldering | TL | 300 | °C | 1/8" from case for 5 seconds | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 3.3 | °C/W | Max. | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | °C/W | Max. | 2 | ||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | 0.7 | V/°C | ID = 250µA, Referenced to 25°C | 3 | ||
| Forward Transconductance | gFS | 25 | S | VDS = 20V, ID = 10A | 3 | ||
| Gate to Source Gate Charge | Qgs | 14 | nC | VDS = 400V, ID = 20A, VGS = 10V | 3 | ||
| Gate to Drain Miller Charge | Qgd | 20 | nC | VDS = 400V, ID = 20A, VGS = 10V | 3 | ||
| Reverse Recovery Time | trr | 154 | ns | VGS = 0V, ISD = 20A, dIF/dt = 100A/µs | 3 | ||
| Reverse Recovery Charge | Qrr | 0.5 | µC | VGS = 0V, ISD = 20A, dIF/dt = 100A/µs | 3 |
CAD (KiCad official)
- Symbol:
FDPF20N50FT - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
fdpf20n50ft-etched.step/fdpf20n50ft-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdpf20n50ft.step/fdpf20n50ft.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (12 pp, sha256
a789f69a1687e623, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).