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AUIRS21811STR
Public Made by Adomby adom
Infineon Technologies Gate Drive ICs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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README
markdownAUIRS21811STR
Infineon Technologies · Gate Drive ICs · SOIC-8
AUIRS21811STR from Infineon Technologies, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | HIN | input | Logic input for high-side driver output (HO), in phase; 3.3V and 5V logic compatible, VIH min 2.5V and VIL max 0.8V. |
| 2 | LIN | input | Logic input for low-side driver output (LO), in phase; 3.3V and 5V logic compatible, VIH min 2.5V and VIL max 0.8V. |
| 3 | COM | power_in | Low-side return (ground reference for the logic inputs and low-side supply). |
| 4 | LO | output | Low-side gate drive output, typically sourcing 1.9A and sinking 2.3A. |
| 5 | VCC | power_in | Low-side and logic fixed supply, recommended 10V to 20V (absolute maximum 20V). |
| 6 | VS | power_in | High-side floating supply return (offset voltage), operational up to 600V. |
| 7 | HO | output | High-side gate drive output, typically sourcing 1.9A and sinking 2.3A, swinging between VS and VB. |
| 8 | VB | power_in | High-side floating supply, VS+10V to VS+20V recommended (absolute maximum 620V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | SOIC-8 |
| Category | Power Management ICs |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| High side floating absolute voltage | VB | -0.3 | 620 | V | 5 | ||
| Low side and logic fixed supply voltage | VCC | -0.3 | 20 | V | 5 | ||
| Allowable offset supply voltage transient | dVS/dt | 50 | V/ns | 5 | |||
| Package power dissipation | PD | 0.625 | W | @ TA ≤ 25°C | 5 | ||
| Thermal resistance, junction to ambient | RthJA | 200 | °C/W | 5 | |||
| Junction temperature | TJ | 150 | °C | 5 | |||
| Storage temperature | TS | -50 | 150 | °C | 5 | ||
| Lead temperature (soldering, 10 seconds) | TL | 300 | °C | 5 | |||
| High side floating supply absolute voltage | VB | 10 | 20 | V | relative to VS (VS + 10 to VS + 20) | 5 | |
| High side floating supply offset voltage | VS | 600 | V | Logic operational for VS of -5V to +600V | 5 | ||
| Low side and logic fixed supply voltage | VCC | 10 | 20 | V | 5 | ||
| Ambient temperature | TA | -40 | 125 | °C | 5 | ||
| Turn-on propagation delay | ton | 135 | 230 | ns | VS = 0V | 6 | |
| Turn-off propagation delay | toff | 135 | 230 | ns | VS = 0V or 600V | 6 | |
| Delay matching, HO & LO turn-on/off | MT | 35 | ns | 6 | |||
| Turn-on rise time | tr | 60 | ns | VS = 0V | 6 | ||
| Turn-off fall time | tf | 35 | ns | VS = 0V | 6 | ||
| Logic 1 input voltage | VIH | 2.5 | V | VCC = 10V to 20V | 6 | ||
| Logic 0 input voltage | VIL | 0.8 | V | VCC = 10V to 20V | 6 | ||
| High level output voltage, VBIAS - VO | VOH | 1.4 | V | IO = 0mA | 6 | ||
| Low level output voltage, VO | VOL | 0.2 | V | IO = 20mA | 6 | ||
| Offset supply leakage current | ILK | 50 | µA | VB = VS = 600V | 6 | ||
| Quiescent VBS supply current | IQBS | 25 | 80 | 200 | µA | VIN = 0V or 5V | 6 |
| Quiescent VCC supply current | IQCC | 55 | 130 | 260 | µA | VIN = 0V or 5V | 6 |
| Logic 1 input bias current | IIN+ | 25 | 60 | µA | VIN = 5V | 6 | |
| Logic 0 input bias current | IIN- | 1 | µA | VIN = 0V | 6 | ||
| VCC and VBS supply undervoltage positive going threshold | VCCUV+/VBSUV+ | 8 | 8.9 | 9.8 | V | 6 | |
| VCC and VBS supply undervoltage negative going threshold | VCCUV-/VBSUV- | 7.4 | 8.2 | 9 | V | 6 | |
| VCC and VBS supply undervoltage hysteresis | VCCUVH/VBSUVH | 0.3 | 0.7 | V | 6 | ||
| Output high short circuit pulsed current | IO25+ | 1.4 | 1.9 | A | VO = 0V, PW ≤ 10us, TJ = 25°C | 6 | |
| Output low short circuit pulsed current | IO25- | 1.8 | 2.3 | A | VO = 15V, PW ≤ 10us, TJ = 25°C | 6 | |
| Output high short circuit pulsed current | IO+ | 1.2 | A | VO = 0V, PW ≤ 10us | 6 | ||
| Output low short circuit pulsed current | IO- | 1.5 | A | VO = 15V, PW ≤ 10us | 6 |
CAD (KiCad official)
- Symbol:
AUIRS21811STR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files:
auirs21811str-etched.step/auirs21811str-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);auirs21811str.step/auirs21811str.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (20 pp, sha256
8a1b0f9e5625a114, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).