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README

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DG412LEDQ-T1-GE3

Vishay Intertech · Pre-ordered Products · TSSOP-16-175mil

DG412LEDQ-T1-GE3 from Vishay Intertech, in a TSSOP-16-175mil. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IN1 input Logic control input for switch 1 (DG412LE: logic 0 = OFF, logic 1 = ON; logic 0 ≤ 0.8 V, logic 1 ≥ 2.4 V).
2 D1 bidirectional Drain terminal of switch 1; conducts equally well in both directions when on, and signal is clamped by internal diodes beyond V+ or V-.
3 S1 bidirectional Source terminal of switch 1; conducts equally well in both directions when on, and blocks voltages up to the supply levels when off.
4 V- power_in Negative supply voltage; V+ to V- is rated -0.3 to +18 V, with dual supply operation recommended at ±3 V to ±8 V (connect to 0 V/ground for single supply).
5 GND power_in Ground reference; GND to V- is rated 18 V maximum.
6 S4 bidirectional Source terminal of switch 4; conducts equally well in both directions when on, and blocks voltages up to the supply levels when off.
7 D4 bidirectional Drain terminal of switch 4; conducts equally well in both directions when on, and signal is clamped by internal diodes beyond V+ or V-.
8 IN4 input Logic control input for switch 4 (DG412LE: logic 0 = OFF, logic 1 = ON; logic 0 ≤ 0.8 V, logic 1 ≥ 2.4 V).
9 IN3 input Logic control input for switch 3 (DG412LE: logic 0 = OFF, logic 1 = ON; logic 0 ≤ 0.8 V, logic 1 ≥ 2.4 V).
10 D3 bidirectional Drain terminal of switch 3; conducts equally well in both directions when on, and signal is clamped by internal diodes beyond V+ or V-.
11 S3 bidirectional Source terminal of switch 3; conducts equally well in both directions when on, and blocks voltages up to the supply levels when off.
12 VL power_in Logic supply voltage; rated from (GND - 0.3 V) to (V+) + 0.3 V.
13 V+ power_in Positive supply voltage; single supply range 3 V to 16 V, and V+ to V- is rated -0.3 to +18 V.
14 S2 bidirectional Source terminal of switch 2; conducts equally well in both directions when on, and blocks voltages up to the supply levels when off.
15 D2 bidirectional Drain terminal of switch 2; conducts equally well in both directions when on, and signal is clamped by internal diodes beyond V+ or V-.
16 IN2 input Logic control input for switch 2 (DG412LE: logic 0 = OFF, logic 1 = ON; logic 0 ≤ 0.8 V, logic 1 ≥ 2.4 V).

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package TSSOP-16-175mil
Category Electronic Tools/Instruments/Consumables
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
V+ to V- V+ to V- -0.3 18 V 2
GND to V- GND to V- 18 V 2
Continuous Current (any terminal) 30 mA 2
Peak Current, S or D 100 mA Pulsed 1 ms, 10 % duty cycle 2
Storage Temperature -65 125 °C DQ, DY suffix 2
Power Dissipation 16-pin TSSOP 450 mW All leads welded or soldered to PC board; derate 7 mW/°C above 75 °C 2
ESD HBM 2500 V per ANSI/ESDA/JEDEC JS-001 2
Latch Up Current 400 mA per JESD78D 2
Operating Temperature (D suffix) -40 85 °C D suffix limits 3
Analog Signal Range VANALOG 0 12 V V+ = 12 V, V- = 0 V, Full 3
Drain-Source On-Resistance RDS(on) 16 26 Ω V+ = 10.8 V, V- = 0 V, IS = 10 mA, VD = 2/9 V, Room 3
Drain-Source On-Resistance RDS(on) 35 Ω V+ = 10.8 V, V- = 0 V, IS = 10 mA, VD = 2/9 V, Full 3
Switch Off Leakage Current (source) IS(off) -1 1 nA VD = 1/11 V, VS = 11/1 V, Room 3
Switch Off Leakage Current (source) IS(off) -10 10 nA VD = 1/11 V, VS = 11/1 V, Full 3
Switch Off Leakage Current (drain) ID(off) -1 1 nA VD = 1/11 V, VS = 11/1 V, Room 3
Switch Off Leakage Current (drain) ID(off) -10 10 nA VD = 1/11 V, VS = 11/1 V, Full 3
Channel On Leakage Current ID(on) -1 1 nA VS = VD = 11/1 V, Room 3
Channel On Leakage Current ID(on) -10 10 nA VS = VD = 11/1 V, Full 3
Input Current, VIN Low IIL -1 0.01 1 μA VIN under test = 0.8 V, Full 3
Input Current, VIN High IIH -1 1 μA VIN under test = 2.4 V, Full 3
Turn-On Time tON 16 50 ns RL = 300 Ω, CL = 35 pF, VS = 5 V, Room 3
Turn-On Time tON 60 ns RL = 300 Ω, CL = 35 pF, VS = 5 V, Full 3
Turn-Off Time tOFF 9 30 ns RL = 300 Ω, CL = 35 pF, VS = 5 V, Room 3
Turn-Off Time tOFF 40 ns RL = 300 Ω, CL = 35 pF, VS = 5 V, Full 3
Positive Supply Current I+ 0.02 1 μA VIN = 0 V or 5 V, Room 3
Positive Supply Current I+ 5 μA VIN = 0 V or 5 V, Full 3
Negative Supply Current I- -1 -0.002 μA VIN = 0 V or 5 V, Room 3
Negative Supply Current I- -5 μA VIN = 0 V or 5 V, Full 3
Logic Supply Current IL 0.002 1 μA VIN = 0 V or 5 V, Room 3
Logic Supply Current IL 5 μA VIN = 0 V or 5 V, Full 3
Ground Current IGND -1 -0.002 μA VIN = 0 V or 5 V, Room 3
Ground Current IGND -5 μA VIN = 0 V or 5 V, Full 3
Analog Signal Range VANALOG -5 5 V V+ = 5 V, V- = -5 V, Full 4
Drain-Source On-Resistance RDS(on) 18 30 Ω V+ = 5 V, V- = -5 V, IS = 10 mA, VD = ± 3.5 V, Room 4
Drain-Source On-Resistance RDS(on) 37 Ω V+ = 5 V, V- = -5 V, IS = 10 mA, VD = ± 3.5 V, Full 4
Switch Off Leakage Current (source) IS(off) -10 10 nA V+ = 5.5, V- = -5.5 V, VD = ± 4.5 V, VS = ± 4.5 V, Full 4
Channel On Leakage Current ID(on) -10 10 nA V+ = 5.5 V, V- = -5.5 V, VS = VD = ± 4.5 V, Full 4
Turn-On Time tON 17 50 ns RL = 300 Ω, CL = 35 pF, VS = ± 3.5 V, Room 4
Turn-On Time tON 60 ns RL = 300 Ω, CL = 35 pF, VS = ± 3.5 V, Full 4
Turn-Off Time tOFF 12 35 ns RL = 300 Ω, CL = 35 pF, VS = ± 3.5 V, Room 4
Turn-Off Time tOFF 40 ns RL = 300 Ω, CL = 35 pF, VS = ± 3.5 V, Full 4
Positive Supply Current I+ 0.03 1 μA VIN = 0 V or 5 V, Room 4
Positive Supply Current I+ 5 μA VIN = 0 V or 5 V, Full 4
Drain-Source On-Resistance RDS(on) 36 50 Ω V+ = 4.5 V, IS = 5 mA, VD = 1 V, 3.5 V, Room 5
Drain-Source On-Resistance RDS(on) 75 Ω V+ = 4.5 V, IS = 5 mA, VD = 1 V, 3.5 V, Full 5
Turn-On Time tON 27 50 ns V+ = 5 V, RL = 300 Ω, CL = 35 pF, VS = 3.5 V, Room 5
Turn-Off Time tOFF 15 30 ns V+ = 5 V, RL = 300 Ω, CL = 35 pF, VS = 3.5 V, Room 5
Drain-Source On-Resistance RDS(on) 106 130 Ω V+ = 2.7 V, V- = 0 V, IS = 5 mA, VD = 0.5, 2.2 V, Room 6
Drain-Source On-Resistance RDS(on) 140 Ω V+ = 2.7 V, V- = 0 V, IS = 5 mA, VD = 0.5, 2.2 V, Full 6
Turn-On Time tON 57 85 ns V+ = 3 V, RL = 300 Ω, CL = 35 pF, VS = 1.5 V, Room 6
Turn-Off Time tOFF 25 60 ns V+ = 3 V, RL = 300 Ω, CL = 35 pF, VS = 1.5 V, Room 6

CAD (KiCad official)

  • Symbol: DG412LEDQ-T1-GE3
  • Footprint: Package_SO:TSSOP-16_4.4x5mm_P0.65mm
  • 3D model: TSSOP-16-175mil (KiCad packages3D, STEP)
  • 3D model files: dg412ledq-t1-ge3-etched.step / dg412ledq-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dg412ledq-t1-ge3.step / dg412ledq-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (17 pp, sha256 f1543fcdb9021999, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF