component
PHKD6N02LT-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownPHKD6N02LT-HXY
HXY MOSFET · MOSFETs · SOP-8
PHKD6N02LT-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source terminal of the first N-channel MOSFET, rated for a drain-source voltage of 20 V with gate-source voltage up to +12 V. |
| 2 | G1 | input | Gate of the first N-channel MOSFET, with a gate-source voltage limit of +12 V and specified operation at gate voltages as low as 2.5 V. |
| 3 | S2 | passive | Source terminal of the second N-channel MOSFET, rated for a drain-source voltage of 20 V with gate-source voltage up to +12 V. |
| 4 | G2 | input | Gate of the second N-channel MOSFET, with a gate-source voltage limit of +12 V and specified operation at gate voltages as low as 2.5 V. |
| 5 | D2 | passive | Drain of the second N-channel MOSFET, rated for 20 V drain-source voltage and 6 A drain current at TA=25°C. |
| 6 | D2 | passive | Drain of the second N-channel MOSFET (internally common with pin 5), rated for 20 V drain-source voltage and 6 A drain current at TA=25°C. |
| 7 | D1 | passive | Drain of the first N-channel MOSFET, rated for 20 V drain-source voltage and 6 A drain current at TA=25°C. |
| 8 | D1 | passive | Drain of the first N-channel MOSFET (internally common with pin 7), rated for 20 V drain-source voltage and 6 A drain current at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 21 | 25 | mΩ | VGS=4.5V, ID=6A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 32 | 45 | mΩ | VGS=2.5V, ID=4A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 3 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 25 | uA | VDS=20V, VGS=0V | 2 | ||
| Drain-Source Leakage Current (Tj=70oC) | 250 | uA | Tj=70oC; VDS=20V, VGS=0V | 2 | |||
| Gate-Source Leakage | IGSS | 100 | nA | VGS=+12V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 11 | 17.6 | nC | ID=6A, VDS=16V, VGS=4.5V | 2 | |
| Input Capacitance | Ciss | 570 | 910 | pF | VGS=0V, VDS=20V, f=1.0MHz | 2 | |
| Gate Resistance | Rg | 1.6 | 2.4 | Ω | f=1.0MHz | 2 | |
| Forward On Voltage | VSD | 1.2 | V | IS=1.7A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | 12 | V | 1 | |||
| Drain Current | ID@TA=25℃ | 6 | A | TA=25℃, VGS @ 4.5V | 1 | ||
| Drain Current | ID@TA=70℃ | 4.8 | A | TA=70℃, VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 26 | A | Pulse width limited by Max. junction temperature (note 1) | 1 | ||
| Total Power Dissipation | PD@TA=25℃ | 2 | W | TA=25℃ | 1 | ||
| Linear Derating Factor | 0.016 | W/℃ | 1 | ||||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 62.5 | ℃/W | Junction-ambient, note 3: surface mounted on 1 in2 copper pad of FR4 board, t<10sec | 1 | ||
| Thermal Resistance, Junction-ambient (minimum copper pad) | Rthj-a | 135 | ℃/W | Note 3: when mounted on Min. copper pad | 2 |
CAD (KiCad official)
- Symbol:
PHKD6N02LT-HXY - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
phkd6n02lt-hxy-etched.step/phkd6n02lt-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);phkd6n02lt-hxy.step/phkd6n02lt-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
9c85a8f6e0269068, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).