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SI9943DY-T1-E3-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSI9943DY-T1-E3-VB
VBsemi Elec · MOSFETs · SO-8
SI9943DY-T1-E3-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (30 V VDS, ±20 V VGS max). |
| 2 | G1 | input | Gate of the N-channel MOSFET (±20 V VGS max). |
| 3 | S2 | passive | Source of the P-channel MOSFET (-30 V VDS, ±20 V VGS max). |
| 4 | G2 | input | Gate of the P-channel MOSFET (±20 V VGS max). |
| 5 | D2 | passive | Drain of the P-channel MOSFET, internally tied with pin 6 (-8 A package-limited continuous current). |
| 6 | D2 | passive | Drain of the P-channel MOSFET, internally tied with pin 5 (-8 A package-limited continuous current). |
| 7 | D1 | passive | Drain of the N-channel MOSFET, internally tied with pin 8 (8 A package-limited continuous current). |
| 8 | D1 | passive | Drain of the N-channel MOSFET, internally tied with pin 7 (8 A package-limited continuous current). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage N-Ch | VDS | 30 | V | TA = 25 °C | 1 | ||
| Drain-Source Voltage P-Ch | VDS | -30 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | N and P channel | 1 | |
| Continuous Drain Current N-Ch | ID | 8 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Continuous Drain Current P-Ch | ID | -8 | A | TC = 25 °C, TJ = 150 °C | 1 | ||
| Pulsed Drain Current N-Ch | IDM | 40 | A | 10 µs pulse width | 1 | ||
| Pulsed Drain Current P-Ch | IDM | -40 | A | 10 µs pulse width | 1 | ||
| Single Pulse Avalanche Current N-Ch | IAS | 10 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Current P-Ch | IAS | 20 | A | L = 0.1 mH | 1 | ||
| Power Dissipation | PD | 2 | W | TA = 25 °C, N and P channel | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance N-Ch | RthJA | 50 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Junction-to-Ambient Thermal Resistance P-Ch | RthJA | 47 | 62.5 | °C/W | t ≤ 10 s | 1 | |
| Junction-to-Foot Thermal Resistance N-Ch | RthJF | 30 | 40 | °C/W | Steady State | 1 | |
| Junction-to-Foot Thermal Resistance P-Ch | RthJF | 29 | 38 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage N-Ch | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Drain-Source Breakdown Voltage P-Ch | VDS | -30 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate Threshold Voltage N-Ch | VGS(th) | 1 | 2 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage N-Ch | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 | |
| Gate-Body Leakage P-Ch | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V | 2 | |
| Zero Gate Voltage Drain Current N-Ch | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current P-Ch | IDSS | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current N-Ch | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Zero Gate Voltage Drain Current P-Ch | IDSS | -10 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current N-Ch | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current P-Ch | ID(on) | -20 | A | VDS = - 5 V, VGS = - 10 V | 2 | ||
| Body Diode Voltage N-Ch | VSD | 0.81 | 1.2 | V | IS = 5.4 A | 3 | |
| Body Diode Voltage P-Ch | VSD | -1.2 | -0.77 | V | IS = - 2 A | 3 | |
| Total Gate Charge P-Ch | Qg | 41.5 | 63 | nC | VDS = - 20 V, VGS = - 10 V, ID = - 10 A | 2 | |
| Body Diode Reverse Recovery Time P-Ch | trr | 31 | 57 | ns | IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C | 3 |
CAD (KiCad official)
- Symbol:
SI9943DY-T1-E3-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
si9943dy-t1-e3-vb-etched.step/si9943dy-t1-e3-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);si9943dy-t1-e3-vb.step/si9943dy-t1-e3-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
32dd5c7d53c6788e, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).