component
RC7N65
Public Made by Adomby adom
RealChip MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownRC7N65
RealChip · MOSFETs · TO-220
RC7N65 from RealChip, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate, controls the channel with a maximum gate-source voltage of ±30 V and a threshold of 2 V to 4 V. |
| 2 | D | passive | Drain, rated for 650 V drain-source voltage and 7 A continuous current at TC=25℃ (28 A pulsed), and connected to the metal tab. |
| 3 | S | passive | Source, the current return of the N-channel MOSFET, with a 7 A maximum continuous body-diode forward current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | RealChip |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 650 | V | 1 | |||
| Drain Current -continuous | ID | 7 | A | TC=25℃ | 1 | ||
| Drain Current -continuous | ID | 4.1 | A | TC=100℃ | 1 | ||
| Drain Current, pulse (note 1) | IDM | 28 | A | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulsed Avalanche Energy (note 2) | EAS | 80 | mJ | 1 | |||
| Avalanche Current (note 1) | IAS | 4 | A | 1 | |||
| Repetitive Avalanche Energy (note 1) | EAR | 8 | mJ | 1 | |||
| Peak Diode Recovery dv/dt (note 3) | dv/dt | 5 | V/ns | 1 | |||
| Power Dissipation | PD | 97 | W | TC=25℃ | 1 | ||
| Operating and Storage Temperature Range | TJ，TSTG | -55 | 150 | ℃ | 1 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | ℃ | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 650 | V | ID=250μA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=650V,VGS=0V, TC=25℃ | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS=520V, TC=125℃ | 2 | ||
| Gate-body leakage current | IGSS（F/R） | -100 | 100 | nA | VDS=0V, VGS =±30V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS , ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.1 | 1.35 | Ω | VGS =10V , ID=3.5A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 7 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 28 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS=0V, IS=7A | 2 | ||
| Thermal Resistance, Junction to Case | Rth(j-c) | 1.29 | ℃/W | 3 | |||
| Thermal Resistance, Junction to Ambient | Rth(j-A) | 60 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
RC7N65 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
rc7n65-etched.step/rc7n65-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);rc7n65.step/rc7n65.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: RealChip datasheet (8 pp, sha256
8643d68f4bb19ed5, retrieved 2026-10-19, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).