component
AGMH614C
Public Made by Adomby adom
AGM-Semi MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownAGMH614C
AGM-Semi · MOSFETs · TO-220
AGMH614C from AGM-Semi, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20 V, with threshold VGS(th) of 2.0 to 4.0 V at ID=250 µA. |
| 2 | D | passive | Drain, connected to the tab; drain-source voltage is rated 60 V and continuous drain current 50 A (package limited) at Tc=25 °C. |
| 3 | S | passive | Source; the body diode conducts up to 50 A with VSD max 1.2 V at IS=20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AGM-Semi |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | VGS=0V | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | VDS=0V (printed as ±20 V) | 1 | |
| Drain Current-Continuous | ID | 50 | A | Tc=25℃ (Note 1) | 1 | ||
| Drain Current-Continuous | ID | 33 | A | Tc=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | 200 | A | Note 2: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Maximum Power Dissipation | PD | 66 | w | Tc=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 26 | w | Tc=100℃ | 1 | ||
| Avalanche energy | EAS | 156 | mJ | Note 3: TJ=25℃,VDD=30V,Vgs=10V,ID=25A, L=0.5mH,RG=25ohm | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient (Steady State) | RθJA | 60 | ℃/W | Steady State, Note 1 | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 1.9 | ℃/W | Note 1 | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 2.8 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 11 | 15 | mΩ | VGS=10V, ID=20A | 2 | |
| Source-Drain Current (Body Diode) | ISD | 50 | A | 2 | |||
| Forward on Voltage | VSD | 1.2 | V | VGS=0V,IS=20A | 2 |
CAD (KiCad official)
- Symbol:
AGMH614C - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
agmh614c-etched.step/agmh614c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);agmh614c.step/agmh614c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AGM-Semi datasheet (6 pp, sha256
2e1bfa8b0cc4ccf6, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).