component
FMMT458
Public Made by Adomby adom
YONGYUTAI Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFMMT458
YONGYUTAI · Bipolar (BJT) · SOT-23
FMMT458 from YONGYUTAI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; IB max 200 mA, VEBO max 5 V. |
| 2 | EMITTER | passive | Emitter terminal of the NPN transistor; VEBO max 5 V. |
| 3 | COLLECTOR | passive | Collector terminal of the NPN transistor; VCEO and VCBO 400 V, continuous IC 225 mA, peak ICM 1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YONGYUTAI |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 400 | V | 1 | |||
| Collector-Base Voltage | VCBO | 400 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Continuous Collector Current | IC | 225 | mA | 1 | |||
| Peak Pulse Current | ICM | 1 | A | 1 | |||
| Base Current | IB | 200 | mA | 1 | |||
| Power Dissipation | Ptot | 500 | mW | Tamb=25°C | 1 | ||
| Operating and Storage Temperature Range | Tj:Tstg | -55 | 150 | °C | 1 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 400 | V | IC=100A | 1 | ||
| Collector-Emitter Breakdown Voltage | VCEO(sus) | 400 | V | IC=10mA* | 1 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE=100A | 1 | ||
| Collector Cut-Off Current | ICBO | 100 | nA | VCB=320V | 1 | ||
| Emitter Cut-Off Current | IEBO | 100 | nA | VEB=4V | 1 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.2 | V | IC=20mA, IB=2mA* | 1 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC=50mA, IB=6mA* | 1 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 0.9 | V | IC=50mA, IB=5mA* | 1 | ||
| Base-Emitter Turn On Voltage | VBE(on) | 0.9 | V | IC=50mA, VCE=10V* | 1 | ||
| Static Forward Current Transfer Ratio | hFE | 100 | IC=1mA, VCE=10V | 1 | |||
| Static Forward Current Transfer Ratio | hFE | 15 | IC=100mA, VCE=10V* | 1 | |||
| Static Forward Current Transfer Ratio | hFE | 300 | 1 | ||||
| Transition Frequency | fT | 50 | MHz | IC=10mA, VCE=20V; f=20MHz | 1 | ||
| Output Capacitance | Cobo | 5 | pF | VCB=20V, f=1MHz | 1 | ||
| Turn-On Time | ton | 135 | ns | IC=50mA, VCC=100V, IB1=5mA, IB2=-10mA | 1 | ||
| Turn-Off Time | toff | 2260 | ns | IC=50mA, VCC=100V, IB1=5mA, IB2=-10mA | 1 |
CAD (KiCad official)
- Symbol:
FMMT458 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
fmmt458-etched.step/fmmt458-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fmmt458.step/fmmt458.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YONGYUTAI datasheet (3 pp, sha256
8b9362de585ffc4d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).