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Contents

README

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SI2305CI-MS

MSKSEMI · MOSFETs · SOT-23

SI2305CI-MS from MSKSEMI, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with a gate-source voltage limit of ±12 V and a threshold of -0.4 to -1.0 V.
2 S passive Source of the P-channel MOSFET, with the body diode running source to drain and a continuous source current of -4.9 A.
3 D passive Drain of the P-channel MOSFET, rated for a drain-source voltage of -20 V and a continuous drain current of -5 A.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V 2
Gate-Source Voltage VGS -12 12 V 2
Drain Current-Continuous ID -5 A 2
Drain Current-Pulsed IDM -14 A Note 1 2
Maximum Power Dissipation PD 1.31 W 2
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 2
Thermal Resistance, Junction-to-Ambient RθJA 120 ℃/W Note 2 2
Drain-Source Breakdown Voltage BVDSS -20 V VGS=0V, ID=-250uA 3
Static Drain-Source On-Resistance RDS(ON) 35 45 mΩ VGS=-4.5V, ID=-4.9A 3
Static Drain-Source On-Resistance RDS(ON) 45 60 mΩ VGS=-2.5V, ID=-3.4A 3
Static Drain-Source On-Resistance RDS(ON) 65 85 mΩ VGS=-1.8V, ID=-2A 3
Gate Threshold Voltage VGS(th) -0.4 -1 V VGS=VDS, ID=-250uA 3
Drain-Source Leakage Current IDSS -1 uA VDS=-16V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current IDSS -5 uA VDS=-16V, VGS=0V, TJ=55℃ 3
Gate-Source Leakage Current IGSS -100 100 nA VGS=±12V, VDS=0V 3
Total Gate Charge (-4.5V) Qg 10.2 14.3 nC VDS=-15V, VGS=-4.5V, ID=-3A 3
Gate-Source Charge Qgs 1.89 2.6 nC 3
Gate-Drain Charge Qgd 3.1 4.3 nC 3
Turn-On Delay Time Td(on) 5.6 11.2 ns VDD=-10V, VGS=-4.5V, RG=3.3Ω, ID=-3A 3
Rise Time Tr 40.8 73 ns 3
Turn-Off Delay Time Td(off) 33.6 67 ns 3
Fall Time Tf 18 36 ns 3
Input Capacitance Ciss 857 1200 pF VDS=-15V, VGS=0V, f=1MHz 3
Output Capacitance Coss 114 160 pF 3
Reverse Transfer Capacitance Crss 108 151 pF 3
Continuous Source Current IS -4.9 A VG=VD=0V, Force Current 3
Pulsed Source Current ISM -14 A 3
Diode Forward Voltage VSD -1 V VGS=0V, IS=-1A, TJ=25℃ 3
BVDSS Temperature Coefficient △BVDSS/△TJ -0.014 V/℃ Reference to 25℃, ID=-1mA 3
VGS(th) Temperature Coefficient △VGS(th) 3.95 mV/℃ 3
Forward Transconductance gfs 12.8 S VDS=-5V, ID=-3A 3
Reverse Recovery Time trr 21.8 nS IF=-3A, di/dt=100A/µs, TJ=25℃ 3
Reverse Recovery Charge Qrr 6.9 nC 3

CAD (KiCad official)

  • Symbol: SI2305CI-MS
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: si2305ci-ms-etched.step / si2305ci-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si2305ci-ms.step / si2305ci-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (7 pp, sha256 3d8316c6193ab945, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF