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WSD2090DN56
Public Made by Adomby adom
Winsok Semicon MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWSD2090DN56
Winsok Semicon · MOSFETs · DFN5x6-8
WSD2090DN56 from Winsok Semicon, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 2 and 3 (VDSS 20 V, ID 80 A at TC=25℃). |
| 2 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 3 (VDSS 20 V, ID 80 A at TC=25℃). |
| 3 | S | passive | Source terminal of the N-channel MOSFET, tied with pins 1 and 2 (VDSS 20 V, ID 80 A at TC=25℃). |
| 4 | G | input | Gate terminal of the N-channel MOSFET, with VGSS rated ±12 V and threshold 0.50 to 1.0 V at ID=250μA. |
| 5 | D | passive | Drain terminal of the N-channel MOSFET, tied with pins 6-8 (VDSS 20 V, pulsed IDM 360 A). |
| 6 | D | passive | Drain terminal of the N-channel MOSFET, tied with pins 5, 7 and 8 (VDSS 20 V, pulsed IDM 360 A). |
| 7 | D | passive | Drain terminal of the N-channel MOSFET, tied with pins 5, 6 and 8 (VDSS 20 V, pulsed IDM 360 A). |
| 8 | D | passive | Drain terminal of the N-channel MOSFET, tied with pins 5-7 (VDSS 20 V, pulsed IDM 360 A). |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | 1 | |||
| Gate-Source Voltage | VGSS | -12 | 12 | V | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID@TC=25℃ | 80 | A | TC=25℃ | 1 | ||
| Continuous Drain Current, VGS @ 10V | ID@TC=100℃ | 59 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 360 | A | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 110 | mJ | 1 | |||
| Power Dissipation | PD | 81 | W | 1 | |||
| Thermal Resistance, Junction to Case (as printed; symbol RθJA) | RθJA | 65 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 4 | ℃/W | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | 24 | V | VGS=0V, ID=250μA | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.65 | 1 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 2.8 | 4 | mΩ | VGS=4.5V, ID=30A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 4 | 6 | mΩ | VGS=2.5V, ID=20A | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=20V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±10V, VDS=0V | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | IS=7.6A,VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
WSD2090DN56 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files:
wsd2090dn56-etched.step/wsd2090dn56-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsd2090dn56.step/wsd2090dn56.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (5 pp, sha256
bdb7718084e88eba, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).