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MPSA44SQ

Public Made by Adom

by adom

PJSEMI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsmpsa44sqfactory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

Schematic Symbol

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PCB Footprint

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Datasheet

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Contents

README

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MPSA44SQ

PJSEMI · Bipolar (BJT) · SOT-89

MPSA44SQ from PJSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the NPN transistor; the datasheet gives VEBO of 6 V and VBE(sat) of at most 0.75 V at IC = 10 mA, IB = 1 mA.
2 Collector passive Collector terminal; rated for VCBO and VCEO of 400 V, collector current IC of 200 mA and pulsed current ICP of 300 mA.
3 Emitter passive Emitter terminal, the reference for the VCEO of 400 V and VEBO of 6 V limits; package maximum power dissipation PD is 500 mW.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Base Voltage VCBO 400 V 1
Collector Emitter Voltage VCEO 400 V 1
Emitter Base Voltage VEBO 6 V 1
Collector Current IC 200 mA 1
Pulsed Collector Current ICP 300 mA 1
Maximum Power Dissipation PD 500 mW Ratings at 25℃ ambient temperature 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
DC Current Gain HFE 40 at VCE = 10 V, IC = 1 mA 2
DC Current Gain HFE 50 200 at VCE = 10 V, IC = 10 mA 2
DC Current Gain HFE 45 at VCE = 10 V, IC = 50 mA 2
Collector Base Cutoff Current ICBO 100 nA at VCB = 400 V 2
Emitter Base Cutoff Current IEBO 100 nA at VEB = 4 V 2
Collector Base Breakdown Voltage V(BR)CBO 400 V at IC = 100 μA 2
Collector Emitter Breakdown Voltage V(BR)CEO 400 V at IC = 1 mA 2
Emitter Base Breakdown Voltage V(BR)EBO 6 V at IE = 100 μA 2
Collector Emitter Saturation Voltage VCE(sat) 0.4 V at IC = 1 mA, IB = 0.1 mA 2
Collector Emitter Saturation Voltage VCE(sat) 0.5 V at IC = 10 mA, IB = 1 mA 2
Collector Emitter Saturation Voltage VCE(sat) 0.75 V at IC = 50 mA, IB = 5 mA 2
Base Emitter Saturation Voltage VBE(sat) 0.75 V at IC = 10 mA, IB = 1 mA 2
Input Capacitance Cib 130 pF at VCB = 20 V, IC = 0, f = 1 MHz 2
Output Capacitance Cob 7 pF at VCB = 0.5 V, IE = 0, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: MPSA44SQ
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: mpsa44sq-etched.step / mpsa44sq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mpsa44sq.step / mpsa44sq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (7 pp, sha256 81d56ea7e6f8dcb1, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF