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AON6411
Public Made by Adomby adom
Alpha Omega Semicon MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAON6411
Alpha Omega Semicon · MOSFETs · DFN-8(5x6)
AON6411 from Alpha Omega Semicon, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; VDS max -20V and continuous drain current -85A (TC=25°C, package limited). |
| 2 | S | passive | Source of the P-channel MOSFET, connected in parallel with the other source pins. |
| 3 | S | passive | Source of the P-channel MOSFET, connected in parallel with the other source pins. |
| 4 | G | input | Gate; absolute maximum gate-source voltage is ±12V, with threshold VGS(th) of -0.5V min to -1.3V max. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS max -20V, pulsed drain current -340A. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected in parallel with the other drain pins. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected in parallel with the other drain pins. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected in parallel with the other drain pins. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Alpha Omega Semicon |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | ID=-250µA, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS=-20V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS=-20V, VGS=0V, TJ=55°C | 2 | ||
| Gate-Body leakage current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.5 | -0.85 | -1.3 | V | VDS=VGS, ID=-250µA | 2 |
| On state drain current | ID(ON) | -340 | A | VGS=-10V, VDS=-5V | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 1.7 | 2.1 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Static Drain-Source On-Resistance (TJ=125°C) | RDS(ON) | 2.45 | 3 | mΩ | VGS=-10V, ID=-20A, TJ=125°C | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2 | 2.5 | mΩ | VGS=-4.5V, ID=-20A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.8 | 3.6 | mΩ | VGS=-2.5V, ID=-20A | 2 | |
| Diode Forward Voltage | VSD | -0.57 | -1 | V | IS=-1A, VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | -85 | A | 2 | |||
| Gate resistance | Rg | 2.1 | 4.2 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | |
| Total Gate Charge (10V) | Qg | 235 | 330 | nC | VGS=-10V, VDS=-10V, ID=-20A | 2 | |
| Total Gate Charge (4.5V) | Qg | 100 | 140 | nC | VGS=-4.5V, VDS=-10V, ID=-20A | 2 | |
| Drain-Source Voltage | VDS | -20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | -85 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | -67 | A | TC=100°C | 1 | ||
| Pulsed Drain Current | IDM | -340 | A | 1 | |||
| Continuous Drain Current (TA=70°C) | IDSM | -47 | A | TA=70°C | 1 | ||
| Avalanche Current | IAS | -38 | A | 1 | |||
| Avalanche energy | EAS | 245 | mJ | L=0.1mH | 1 | ||
| Power Dissipation | PD | 156 | W | TC=25°C | 1 | ||
| Power Dissipation | PD | 62.5 | W | TC=100°C | 1 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 14 | 17 | °C/W | t ≤ 10s | 1 | |
| Maximum Junction-to-Ambient | RθJA | 40 | 55 | °C/W | Steady-State | 1 | |
| Maximum Junction-to-Case | RθJC | 0.6 | 0.8 | °C/W | Steady-State | 1 |
CAD (KiCad official)
- Symbol:
AON6411 - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
aon6411-etched.step/aon6411-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);aon6411.step/aon6411.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Alpha Omega Semicon datasheet (6 pp, sha256
bd90f610b71e52a4, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).