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NCE30TD60BD

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Wuxi NCE Power Semiconductor IGBT Transistors / Modules, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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NCE30TD60BD

Wuxi NCE Power Semiconductor · IGBT Transistors / Modules · TO-263

NCE30TD60BD from Wuxi NCE Power Semiconductor, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-emitter voltage is limited to ±30 V (VGES) and the gate threshold voltage is 4.0 to 6.0 V at IC=1mA.
2 C passive Collector (also the mounting tab); collector-emitter voltage is rated 600 V (VCES) with 60 A continuous collector current and 30 A at TC=100°C.
3 E passive Emitter, which is also the anode of the co-packaged anti-parallel diode; the diode is rated 30 A continuous forward current at TC=100°C.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Voltage VCES 600 V 1
Gate-Emitter Voltage VGES -30 30 V 1
Collector Current IC 60 A 1
Collector Current IC 30 A TC = 100°C 1
Pulsed Collector Current ICplus 90 A tp limited by Tjmax 1
Turn-off safe operating area collector current 90 A VCE=600V, Tj=150°C 1
Diode Continuous Forward Current IF 30 A TC = 100°C 1
Diode Maximum Forward Current IFM 90 A 1
Power Dissipation PD 190 W TC = 25°C 1
Power Dissipation PD 76 W TC = 100 °C 1
Operating Junction and Storage Temperature Range TJ,Tstg -55 150 °C 1
Maximum Temperature for Soldering TL 260 °C 1
Short circuit withstand time tsc 3 us VGE=15V, VCC≤400V, Tj≤150°C, time between short circuits ≥1.0s, allowed number of short circuits <1000 1
Thermal Resistance, Junction to case for IGBT RθJC 0.65 °C/W 2
Thermal Resistance, Junction to case for Diode RθJC 1.08 °C/W 2
Thermal Resistance, Junction to Ambient RθJA 40 °C/W 2
Collector-Emitter Breakdown Voltage V(BR)CES 600 V VGE=0V, ICE=1mA 2
Collector-Emitter Leakage Current ICES 4 uA VGE=0V, VCE=600V 2
Gate to Emitter Forward Leakage IGES(F) 200 nA VGE=+30V, VCE=0V 2
Gate to Source Reverse Leakage IGES(R) 200 nA VGE=-30V, VCE=0V 2
Collector-Emitter Saturation Voltage VCE(sat) 1.7 1.9 V IC=30A, VGE=15V, Tj=25°C 2
Collector-Emitter Saturation Voltage VCE(sat) 1.9 V IC=30A, VGE=15V, Tj=150°C 2
Gate Threshold Voltage VGE(th) 4 5 6 V IC=1mA, VCE=VGE 2
Diode Forward Voltage VFM 1.7 1.9 V IF=30A 2
Input Capacitance Cies 3552 pF VCE=25V, VGE=0V, f=1MHz 2
Output Capacitance Coes 106 pF VCE=25V, VGE=0V, f=1MHz 2
Reverse Transfer Capacitance Cres 67 pF VCE=25V, VGE=0V, f=1MHz 2
Total Gate Charge Qg 132 nC VCC=480V, IC=30A, VGE=15V 2
Gate to Emitter Charge Qge 28 nC VCC=480V, IC=30A, VGE=15V 2
Gate to Collector Charge Qgc 54 nC VCC=480V, IC=30A, VGE=15V 2
Short circuit collector current IC(SC) 190 A VGE=15V, VCC≤400V, tSC≤3us, Tj≤150°C 2
Turn-on Delay Time td(ON) 19 ns VCC=400V, IC=30A, VGE=0/15V, Rg=5Ω, inductive load 2
Rise Time tr 17 ns VCC=400V, IC=30A, VGE=0/15V, Rg=5Ω, inductive load 2
Turn-Off Delay Time td(OFF) 166 ns VCC=400V, IC=30A, VGE=0/15V, Rg=5Ω, inductive load 2
Fall Time tf 16 ns VCC=400V, IC=30A, VGE=0/15V, Rg=5Ω, inductive load 2
Turn-On Switching Loss Eon 0.36 mJ VCC=400V, IC=30A, VGE=0/15V, Rg=5Ω, inductive load 2
Turn-Off Switching Loss Eoff 0.32 mJ VCC=400V, IC=30A, VGE=0/15V, Rg=5Ω, inductive load 2
Total Switching Loss Ets 0.68 mJ VCC=400V, IC=30A, VGE=0/15V, Rg=5Ω, inductive load 2
Diode Peak Reverse Recovery Current IRRM 4 A IF=30A, di/dt=200A/us 2
Reverse Recovery Time Trr 178 ns IF=30A, di/dt=200A/us 2
Reverse Recovery Charge Qrr 0.4 uC IF=30A, di/dt=200A/us 2

CAD (KiCad official)

  • Symbol: NCE30TD60BD
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: nce30td60bd-etched.step / nce30td60bd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nce30td60bd.step / nce30td60bd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (8 pp, sha256 34d6daa60f9f9bf9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF