component
BSL207SP H6327
Public Made by Adomby adom
Infineon Technologies MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownBSL207SP H6327
Infineon Technologies · MOSFETs · TSOP-6
BSL207SP H6327 from Infineon Technologies, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated VDS = -20 V with continuous drain current of -6 A at TA = 25 °C. |
| 2 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated VDS = -20 V with continuous drain current of -6 A at TA = 25 °C. |
| 3 | Gate | input | Gate terminal; the gate-source voltage is rated VGS = ±12 V maximum. |
| 4 | S | passive | Source terminal of the P-channel MOSFET; the datasheet gives no separate source-pin limit beyond the device ratings. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated VDS = -20 V with continuous drain current of -6 A at TA = 25 °C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated VDS = -20 V with continuous drain current of -6 A at TA = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | VGS=0, ID=-250µA | 2 | ||
| Gate threshold voltage | VGS(th) | -0.6 | -0.9 | -1.2 | V | VGS=VDS, ID=-40µA | 2 |
| Zero gate voltage drain current, Tj=25°C | IDSS | -0.1 | -1 | µA | VDS=-20V, VGS=0, Tj=25°C | 2 | |
| Zero gate voltage drain current, Tj=150°C | IDSS | -10 | -100 | µA | VDS=-20V, VGS=0, Tj=150°C | 2 | |
| Gate-source leakage current | IGSS | -10 | -100 | nA | VGS=-12V, VDS=0 | 2 | |
| Drain-source on-state resistance (VGS=-2.5V) | RDS(on) | 43 | 65 | mΩ | VGS=-2.5V, ID=-4.9A | 2 | |
| Drain-source on-state resistance (VGS=-4.5V) | RDS(on) | 29 | 41 | mΩ | VGS=-4.5V, ID=-6A | 2 | |
| Transconductance | gfs | 7 | 14 | S | VDS≥2IDRDS(on)max, ID=-4.8A | 3 | |
| Turn-on delay time | td(on) | 9 | 14 | ns | VDD=-10V, VGS=-4.5V, ID=-1A, RG=6Ω | 3 | |
| Rise time | tr | 17 | 26 | ns | VDD=-10V, VGS=-4.5V, ID=-1A, RG=6Ω | 3 | |
| Turn-off delay time | td(off) | 42 | 63 | ns | VDD=-10V, VGS=-4.5V, ID=-1A, RG=6Ω | 3 | |
| Fall time | tf | 53 | 76 | ns | VDD=-10V, VGS=-4.5V, ID=-1A, RG=6Ω | 3 | |
| Gate to source charge | Qgs | -1.7 | -2.6 | nC | VDD=-10V, ID=-6A | 3 | |
| Gate to drain charge | Qgd | -7.1 | -10.7 | nC | VDD=-10V, ID=-6A | 3 | |
| Gate charge total | Qg | -13.3 | -20 | nC | VDD=-10V, ID=-6A, VGS=0 to -4.5V | 3 | |
| Inverse diode continuous forward current | IS | -2.3 | A | TA=25°C | 3 | ||
| Inverse diode direct current, pulsed | ISM | -24 | A | 3 | |||
| Inverse diode forward voltage | VSD | -0.9 | -1.3 | V | VGS=0, /IF/=/ID/ | 3 | |
| Reverse recovery time | trr | 29 | 36 | ns | VR=-10V, /IF/=/ID/, diF/dt=100A/µs | 3 | |
| Reverse recovery charge | Qrr | 12 | 15 | nC | VR=-10V, /IF/=/ID/, diF/dt=100A/µs | 3 | |
| Continuous drain current | ID | -6 | A | TA=25°C | 1 | ||
| Continuous drain current | ID | -4.8 | A | TA=70°C | 1 | ||
| Pulsed drain current | ID puls | -24 | A | TA=25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 44 | mJ | ID=-6 A, VDD=-10V, RGS=25Ω | 1 | ||
| Reverse diode dv/dt | dv/dt | -6 | kV/µs | IS=-6A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C | 1 | ||
| Gate source voltage | VGS | -12 | 12 | V | 1 | ||
| Power dissipation | Ptot | 2 | W | TA=25°C | 1 | ||
| Operating and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, junction - soldering point | RthJS | 50 | K/W | 2 | |||
| Thermal resistance, junction - ambient (SMD, minimum footprint) | RthJA | 230 | K/W | Device on PCB, @ min. footprint | 2 | ||
| Thermal resistance, junction - ambient (SMD, 6 cm2 cooling area) | RthJA | 62.5 | K/W | Device on PCB, @ 6 cm2 cooling area | 2 |
CAD (KiCad official)
- Symbol:
BSL207SP H6327 - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
bsl207sp-h6327-etched.step/bsl207sp-h6327-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);bsl207sp-h6327.step/bsl207sp-h6327.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (8 pp, sha256
c5e6615dbc4438b2, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).