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MBT3906DW1T1G-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMBT3906DW1T1G-HXY
HXY MOSFET · Bipolar (BJT) · SOT-363
MBT3906DW1T1G-HXY from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of PNP transistor 1 (Q1); collector-emitter voltage limit -40 V, collector current up to -200 mA. |
| 2 | B1 | passive | Base of PNP transistor 1 (Q1); emitter-base voltage limit -5 V. |
| 3 | C2 | passive | Collector of PNP transistor 2 (Q2); collector-base voltage limit -40 V, collector current up to -200 mA. |
| 4 | E2 | passive | Emitter of PNP transistor 2 (Q2); collector-emitter voltage limit -40 V, collector current up to -200 mA. |
| 5 | B2 | passive | Base of PNP transistor 2 (Q2); emitter-base voltage limit -5 V. |
| 6 | C1 | passive | Collector of PNP transistor 1 (Q1); collector-base voltage limit -40 V, collector current up to -200 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -40 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -40 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current | IC | -200 | mA | 1 | |||
| Collector Power Dissipation | PC | 200 | mW | 1 | |||
| Thermal Resistance From Junction To Ambient | RΘJA | 625 | ℃/W | 1 | |||
| Operation Junction And Storage Temperature Range | TJ ,Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-10µA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -40 | V | IC=-1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10µA, IC=0 | 1 | ||
| Collector cut-off current | ICEX | -50 | nA | VCE=-30V, VEB(off)=-3V | 1 | ||
| Collector cut-off current | ICBO | -100 | nA | VCB=-40V, IE=0 | 1 | ||
| Base cut-off current | IEBO | -50 | nA | VEB=-5V,IE=0 | 1 | ||
| DC current gain(1) | hFE(1) | 60 | VCE=-1V, IC=-100μA | 1 | |||
| DC current gain(2) | hFE(2) | 80 | VCE=-1V, IC=-1mA | 1 | |||
| DC current gain(3) | hFE(3) | 100 | 300 | VCE=-1V, IC=-10mA | 1 | ||
| DC current gain(4) | hFE(4) | 60 | VCE=-1V, IC=-50mA | 1 | |||
| DC current gain(5) | hFE(5) | 30 | VCE=-1V, IC=-100mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | -0.25 | V | IC=-10mA, IB=-1mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.4 | V | IC=-50mA, IB=-5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -0.65 | -0.85 | V | IC=-10mA, IB=-1mA | 1 | |
| Base-emitter saturation voltage | VBE(sat) | -0.95 | V | IC=-50mA, IB=-5mA | 1 | ||
| Transition frequency | fT | 250 | MHz | VCE=-20V, IC=-10mA, f=100MHz | 1 | ||
| Collector output capacitance | Cob | 4.5 | pF | VCB=-5V, IE=0, f=1MHz | 1 | ||
| Noise figure | NF | 4 | dB | VCE=-5V,Ic=-0.1mA,f=1kHz,Rg=1KΩ | 1 | ||
| Delay time | td | 35 | ns | VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=IB2=-1mA | 1 | ||
| Rise time | tr | 35 | ns | VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=IB2=-1mA | 1 | ||
| Storage time | ts | 225 | ns | VCC=-3V, IC=-10mA, IB1=IB2=-1mA | 1 | ||
| Fall time | tf | 75 | ns | VCC=-3V, IC=-10mA, IB1=IB2=-1mA | 1 |
CAD (KiCad official)
- Symbol:
MBT3906DW1T1G-HXY - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
mbt3906dw1t1g-hxy-etched.step/mbt3906dw1t1g-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mbt3906dw1t1g-hxy.step/mbt3906dw1t1g-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
2d5d8dbe4f28100c, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).