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13003TE

Public Made by Adom

by adom

PJSEMI Bipolar (BJT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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13003TE

PJSEMI · Bipolar (BJT) · TO-252

13003TE from PJSEMI, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base of the NPN transistor; drives the device with VEBO limited to 9 V and collector saturation specified at IB = 100 mA (IC = 500 mA) and IB = 250 mA (IC = 1 A).
2 Collector passive Collector of the NPN transistor; VCBO 800 V, VCEO 430 V, IC 1.5 A continuous and ICM 3 A peak.
3 Emitter passive Emitter of the NPN transistor; reference terminal for the VCEO 430 V and VEBO 9 V ratings.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain HFE 10 40 VCE = 2 V, IC = 500 mA 2
DC Current Gain HFE 8 40 VCE = 2 V, IC = 1 A 2
DC Current Gain HFE 15 40 VCE = 5 V, IC = 200 mA 2
Collector Base Cutoff Current ICBO 10 μA VCB = 700 V 2
Emitter Base Cutoff Current IEBO 10 μA VEB = 9 V 2
Collector Base Breakdown Voltage V(BR)CBO 800 V IC = 500 μA 2
Collector Emitter Breakdown Voltage V(BR)CEO 430 V IC = 5 mA 2
Emitter Base Breakdown Voltage V(BR)EBO 9 V IE = 500 μA 2
Collector Emitter Saturation Voltage VCE(sat) 0.5 V IC = 500 mA, IB = 100 mA 2
Collector Emitter Saturation Voltage VCE(sat) 1 V IC = 1 A, IB = 250 mA 2
Base Emitter Saturation Voltage VBE(sat) 1 V IC = 500 mA, IB = 100 mA 2
Base Emitter Saturation Voltage VBE(sat) 1.2 V IC = 1 A, IB = 250 mA 2
Transition Frequency fT 5 MHz VCE = 10 V, IC = 100 mA, f=1MHz 2
Collector Base Voltage VCBO 800 V 1
Collector Emitter Voltage VCEO 430 V 1
Emitter Base Voltage VEBO 9 V 1
Collector Current IC 1.5 A 1
Peak Collector Current ICM 3 A 1
Maximum Power Dissipation PD 1.25 W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: 13003TE
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 13003te-etched.step / 13003te-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 13003te.step / 13003te.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (4 pp, sha256 2673c77fba74ab15, retrieved 2026-11-02, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF