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BCX17LT1G

Public Made by Adom

by adom

onsemi Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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BCX17LT1G

onsemi · Bipolar (BJT) · SOT-23

BCX17LT1G from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the transistor; the datasheet specifies base drive only through test conditions, such as IB = 50 mAdc at IC = 500 mAdc for VCE(sat).
2 EMITTER passive Emitter terminal; the emitter-base voltage is rated at VEBO = 5.0 Vdc maximum.
3 COLLECTOR passive Collector terminal; rated VCEO 45 Vdc (BCX17/BCX19) or 25 Vdc (BCX18), VCBO 50 Vdc or 30 Vdc, and continuous collector current IC 500 mAdc.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage (BCX17) V(BR)CEO 45 Vdc IC = 10 mAdc, IB = 0 2
Collector-Emitter Breakdown Voltage (BCX17) V(BR)CES 50 Vdc IC = 10 Adc, IC = 0 2
Collector Cutoff Current ICBO 100 nAdc VCB = 20 Vdc, IE = 0 2
Collector Cutoff Current ICBO 5 Adc VCB = 20 Vdc, IE = 0, TA = 150°C 2
Emitter Cutoff Current IEBO 10 Adc VEB = 5.0 Vdc, IC = 0 2
DC Current Gain hFE 100 600 IC = 100 mAdc, VCE = 1.0 Vdc 2
DC Current Gain hFE 70 IC = 300 mAdc, VCE = 1.0 Vdc 2
DC Current Gain hFE 40 IC = 500 mAdc, VCE = 1.0 Vdc 2
Collector-Emitter Saturation Voltage VCE(sat) 0.62 Vdc IC = 500 mAdc, IB = 50 mAdc 2
Base-Emitter On Voltage VBE(on) 1.2 Vdc IC = 500 mAdc, VCE = 1.0 Vdc 2
Collector-Emitter Voltage (BCX17, BCX19) VCEO 45 Vdc 1
Collector-Base Voltage (BCX17, BCX19) VCBO 50 Vdc 1
Emitter-Base Voltage VEBO 5 Vdc 1
Collector Current - Continuous IC 500 mAdc 1
Total Device Dissipation (FR-5 Board) PD 225 mW FR-5 Board (Note 1), TA = 25°C 1
Derate above 25°C (FR-5 Board) PD 1.8 mW/°C Derate above 25°C 1
Thermal Resistance, Junction-to-Ambient (FR-5 Board) RJA 556 °C/W FR-5 Board (Note 1) 1
Total Device Dissipation (Alumina Substrate) PD 300 mW Alumina Substrate (Note 2), TA = 25°C 1
Derate above 25°C (Alumina Substrate) PD 2.4 mW/°C Derate above 25°C 1
Thermal Resistance, Junction-to-Ambient (Alumina Substrate) RJA 417 °C/W Alumina Substrate (Note 2) 1
Junction and Storage Temperature TJ, Tstg -55 150 °C 1

CAD (KiCad official)

  • Symbol: BCX17LT1G
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: bcx17lt1g-etched.step / bcx17lt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); bcx17lt1g.step / bcx17lt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (5 pp, sha256 239bfa6b037c5532, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF