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README

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WSP4620

Winsok Semicon · MOSFETs · SOP-8

WSP4620 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1, per the SOP-8 pin configuration schematic.
2 G1 input Gate of MOSFET 1; VGS rated ±20 V maximum.
3 S2 passive Source of MOSFET 2, per the SOP-8 pin configuration schematic.
4 G2 input Gate of MOSFET 2; VGS rated ±20 V maximum.
5 D2 passive Drain of MOSFET 2, tied with pin 6 on the same drain node.
6 D2 passive Drain of MOSFET 2, tied with pin 5 on the same drain node.
7 D1 passive Drain of MOSFET 1, tied with pin 8 on the same drain node.
8 D1 passive Drain of MOSFET 1, tied with pin 7 on the same drain node.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 30 V 1
Drain-Source Voltage (P-Ch) VDS -30 V 1
Gate-Source Voltage (N-Ch) VGS -20 20 V 1
Gate-Source Voltage (P-Ch) VGS -20 20 V 1
Continuous Drain Current (N-Ch) ID@TC=25℃ 8.8 A VGS @ 10V 1
Continuous Drain Current (P-Ch) ID@TC=25℃ -8.6 A VGS @ 10V 1
Continuous Drain Current at TC=100℃ (N-Ch) ID@TC=100℃ 6.8 A VGS @ 10V 1
Continuous Drain Current at TC=100℃ (P-Ch) ID@TC=100℃ -6.7 A VGS @ 10V 1
Pulsed Drain Current (N-Ch) IDM 17.5 A 1
Pulsed Drain Current (P-Ch) IDM -17 A 1
Single Pulse Avalanche Energy (N-Ch) EAS 72 mJ VDD=25V, VGS=10V, L=0.1mH, IAS=20A 1
Single Pulse Avalanche Energy (P-Ch) EAS 70 mJ VDD=-25V, VGS=-10V, L=0.1mH, IAS=-20A 1
Avalanche Current (N-Ch) IAS 26 A 1
Avalanche Current (P-Ch) IAS -26.5 A 1
Total Power Dissipation (N-Ch) PD@TC=25℃ 3.5 W 1
Total Power Dissipation (P-Ch) PD@TC=25℃ 3.5 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W Surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec (note 1) 1
Thermal Resistance Junction-Case RθJC 36 ℃/W Surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec (note 1) 1
Drain-Source Breakdown Voltage (N-Ch) BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance (N-Ch) RDS(ON) 18 24 mΩ VGS=10V, ID=8A 2
Static Drain-Source On-Resistance (N-Ch) RDS(ON) 25 32 mΩ VGS=4.5V, ID=6A 2
Gate Threshold Voltage (N-Ch) VGS(th) 1 1.5 2.5 V 2
Drain-Source Leakage Current at TJ=25℃ (N-Ch) IDSS 1 uA VDS=20V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current at TJ=55℃ (N-Ch) IDSS 5 uA VDS=20V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current (N-Ch) IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Resistance (N-Ch) Rg 2.5 5 Ω VDS=0V, VGS=0V, f=1MHz 2
Single Pulse Avalanche Energy (N-Ch) EAS 45 mJ VDD=25V, L=0.1mH, IAS=20A 2
Continuous Source Current (N-Ch) IS 9 A 2
Pulsed Source Current (N-Ch) ISM 17.5 A VG=VD=0V, Force Current 2
Diode Forward Voltage (N-Ch) VSD 1.2 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Breakdown Voltage (P-Ch) BVDSS -30 V VGS=0V, ID=-250uA 3
Static Drain-Source On-Resistance (P-Ch) RDS(ON) 22 32 mΩ VGS=-10V, ID=-6A 3
Static Drain-Source On-Resistance (P-Ch) RDS(ON) 32 45 mΩ VGS=-4.5V, ID=-3A 3
Gate Threshold Voltage (P-Ch) VGS(th) -1 -1.6 -2.5 V 3
Drain-Source Leakage Current at TJ=25℃ (P-Ch) IDSS 1 uA VDS=-20V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current at TJ=55℃ (P-Ch) IDSS 5 uA VDS=-20V, VGS=0V, TJ=55℃ 3
Gate-Source Leakage Current (P-Ch) IGSS -100 100 nA VGS=±20V, VDS=0V 3
Single Pulse Avalanche Energy (P-Ch) EAS 37 mJ VDD=-25V, L=0.1mH, IAS=-20A 3
Continuous Source Current (P-Ch) IS -8.6 A 3
Pulsed Source Current (P-Ch) ISM -17 A VG=VD=0V, Force Current 3
Diode Forward Voltage (P-Ch) VSD -1.2 V VGS=0V, IS=-1A, TJ=25℃ 3

CAD (KiCad official)

  • Symbol: WSP4620
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp4620-etched.step / wsp4620-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp4620.step / wsp4620.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (8 pp, sha256 16d63feddcd6c71b, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF