component

WMO25N10T1

Public Made by Adom

by adom

Wayon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorwmo25n10t1factory-2.0.0extractor-text

Verified WMO25N10T1

by Ray · last 4 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

4 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: WMO25N10T1 · TO-252 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-x9fjle7s/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): the datasheet dimensions give no height or body size to compare (datasheet p.6)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ wmo25n10t1.kicad_sym✓ wmo25n10t1.kicad_mod✓ wmo25n10t1.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

WMO25N10T1

Wayon · MOSFETs · TO-252

WMO25N10T1 from Wayon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V and threshold VGS(th) 1.2 V min to 2.5 V max at ID = 250 µA.
2 D passive Drain (center lead, also connected to the mounting tab); VDS rated 100 V and continuous ID 25 A at Tc = 25°C.
3 S passive Source; body-diode continuous source current IS is 25 A max.

Key specifications

Parameter Value
Manufacturer Wayon
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 25 A Tc=25°C 1
Continuous Drain Current ID 15.8 A Tc=100°C 1
Pulsed Drain Current IDM 100 A 1
Single Pulse Avalanche Energy EAS 8.45 mJ 1
Total Power Dissipation PD 53.2 W Tc=25°C 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250µA 2
Gate-Body Leakage Current lGSS -100 100 nA VDS = 0V, VGS = ±20V 2
Zero Gate Voltage Drain Current IDSS 1 μA TJ=25°C, VDS = 100V, VGS = 0V 2
Zero Gate Voltage Drain Current IDSS 100 μA TJ=100°C, VDS = 100V, VGS = 0V 2
Gate-Threshold Voltage VGS(th) 1.2 1.9 2.5 V VDS = VGS, ID = 250µA 2
Drain-Source on-Resistance RDS(on) 35 45 mΩ VGS = 10V, ID = 10A 2
Drain-Source on-Resistance RDS(on) 42 55 mΩ VGS = 4.5V, ID = 5A 2
Diode Forward Voltage VSD 1.2 V IS = 10A, VGS = 0V 2
Continuous Source Current IS 25 A VG=VD=0V, Force Current 2
Forward Transconductance gfs 22 S VDS = 10V, ID = 10A 2
Input Capacitance Ciss 2332 pF VDS = 50V, VGS =0V, f =1MHz 2
Output Capacitance Coss 61.5 pF VDS = 50V, VGS =0V, f =1MHz 2
Reverse Transfer Capacitance Crss 50 pF VDS = 50V, VGS =0V, f =1MHz 2
Gate Resistance RG 0.5 Ω VDS = 0V, VGS =0V, f =1MHz 2
Total Gate Charge Qg 37.9 nC VGS = 10V, VDD = 50V, ID= 10A 2
Gate-Source Charge Qgs 8.3 nC VGS = 10V, VDD = 50V, ID= 10A 2
Gate-Drain Charge Qgd 7.2 nC VGS = 10V, VDD = 50V, ID= 10A 2
Turn-on Delay Time td(on) 7.5 ns VGS =10V, VDD = 50V, RG = 3Ω, ID= 10A 2
Rise Time tr 35.8 ns VGS =10V, VDD = 50V, RG = 3Ω, ID= 10A 2
Turn-off Delay Time td(off) 36.2 ns VGS =10V, VDD = 50V, RG = 3Ω, ID= 10A 2
Fall Time tf 22 ns VGS =10V, VDD = 50V, RG = 3Ω, ID= 10A 2
Reverse Recovery Time trr 42 ns VR =50V, IF=10A, dIF/dt=100A/μs 2
Reverse Recovery Charge Qrr 45 nC VR =50V, IF=10A, dIF/dt=100A/μs 2
Thermal Resistance from Junction-to-Ambient RθJA 62 °C/W Surface mounted on 1 inch² FR-4 board, 2OZ copper (note 1) 1
Thermal Resistance from Junction-to-Case RθJc 2.35 °C/W 1

CAD (KiCad official)

  • Symbol: WMO25N10T1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: wmo25n10t1-etched.step / wmo25n10t1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wmo25n10t1.step / wmo25n10t1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wayon datasheet (7 pp, sha256 65f4eea48bddaaa8, retrieved 2026-11-04, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF