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Contents

README

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IPA60R460CE

Infineon Technologies · MOSFETs · TO-220FP

IPA60R460CE from Infineon Technologies, in a TO-220FP. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET, with a static gate-source voltage limit of -20 V to 20 V and a dynamic limit of -30 V to 30 V.
2 Drain passive Drain terminal of the MOSFET, rated for a continuous drain current of 13.1 A at TC=25°C and a drain-source breakdown voltage V(BR)DSS of 600 V.
3 Source passive Source terminal of the MOSFET, serving as the reference for gate drive, with a continuous diode forward current of 9.3 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220FP
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 13.1 A TC=25°C 3
Continuous drain current ID 8.3 A TC=100°C 3
Pulsed drain current ID,pulse 26 A TC=25°C 3
Avalanche energy, single pulse EAS 185 mJ ID=1.6A; VDD=50V; see table 11 3
Avalanche energy, repetitive EAR 0.28 mJ ID=1.6A; VDD=50V; see table 11 3
Avalanche current, repetitive IAR 1.6 A 3
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...480V 3
Gate source voltage (static) VGS -20 20 V static 3
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 3
Power dissipation (FullPAK) Ptot 30 W TC=25°C 3
Storage temperature Tstg -40 150 °C 3
Operating junction temperature Tj -40 150 °C 3
Continuous diode forward current IS 9.3 A TC=25°C 3
Diode pulse current IS,pulse 26 A TC=25°C 3
Reverse diode dv/dt dv/dt 15 V/ns VDS=0...400V, ISD<=IS, Tj=25°C 3
Maximum diode commutation speed dif/dt 500 A/µs VDS=0...400V, ISD<=IS, Tj=25°C 3
Mounting torque (FullPAK) 50 Ncm M2.5 screws 3
Insulation withstand voltage for TO-220FP VISO 2500 V Vrms, TC=25°C, t=1min 3
Thermal resistance, junction - case (FullPAK) RthJC 4.1 °C/W 3
Thermal resistance, junction - ambient (FullPAK) RthJA 80 °C/W leaded 3
Soldering temperature, wave soldering Tsold 260 °C 1.6mm (0.063 in.) from case for 10s 3
Drain-source breakdown voltage V(BR)DSS 600 V VGS=0V, ID=0.25mA 5
Gate threshold voltage V(GS)th 2.5 3 3.5 V VDS=VGS, ID=0.28mA 5
Zero gate voltage drain current IDSS 10 µA VDS=600, VGS=0V, Tj=25°C 5
Zero gate voltage drain current IDSS 1 µA VDS=600, VGS=0V, Tj=150°C 5
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 5
Drain-source on-state resistance RDS(on) 0.41 0.46 Ω VGS=10V, ID=3.4A, Tj=25°C 5

CAD (KiCad official)

  • Symbol: IPA60R460CE
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220FP (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 b25c7785c794b88d, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF