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Contents

README

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ESDA6V1W5-5

WILLSEMI Will Semicon · ESD And Surge Protection (TVS/ESD) · SOT-353

ESDA6V1W5-5 from WILLSEMI Will Semicon, in a SOT-353. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I/O bidirectional Protected signal line clamped just above the logic supply for positive transients and to a diode drop below ground for negative transients, with ±30kV contact ESD protection per IEC61000-4-2 and 9A (8/20μs) surge per IEC61000-4-5.
2 GND power_in Ground reference pin for the TVS array; negative transients are clamped to a diode drop below this ground.
3 I/O bidirectional Protected signal line clamped just above the logic supply for positive transients and to a diode drop below ground for negative transients, with ±30kV contact ESD protection per IEC61000-4-2 and 9A (8/20μs) surge per IEC61000-4-5.
4 I/O bidirectional Protected signal line clamped just above the logic supply for positive transients and to a diode drop below ground for negative transients, with ±30kV contact ESD protection per IEC61000-4-2 and 9A (8/20μs) surge per IEC61000-4-5.
5 I/O bidirectional Protected signal line clamped just above the logic supply for positive transients and to a diode drop below ground for negative transients, with ±30kV contact ESD protection per IEC61000-4-2 and 9A (8/20μs) surge per IEC61000-4-5.

Key specifications

Parameter Value
Manufacturer WILLSEMI Will Semicon
Package SOT-353
Category Circuit Protection
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak pulse power (tp = 8/20us) Ppk 117 W tp = 8/20us 2
Peak pulse current (tp = 8/20us) IPP 9 A tp = 8/20us 2
ESD according to IEC61000-4-2 air discharge VESD -30 30 kV IEC61000-4-2 air discharge 2
ESD according to IEC61000-4-2 contact discharge VESD -30 30 kV IEC61000-4-2 contact discharge 2
Junction temperature TJ 125 oC 2
Operation temperature TOP -40 85 oC 2
Lead temperature TL 260 oC 2
Storage temperature TSTG -55 150 oC 2
Reverse stand-off voltage VRWM 5 V 3
Reverse leakage current IR 1 uA VRWM = 5V 3
Reverse breakdown voltage VBR 6.2 7.2 8.2 V IBR = 1mA 3
Forward voltage VF 0.4 0.8 1.25 V IF = 10mA 3
Clamping voltage (TLP, note 1) VCL 11 V IPP = 16A, tp = 100ns 3
Clamping voltage (ESD, note 2) VCL 11 V VESD = +8kV, contact discharge per IEC61000-4-2 3
Dynamic resistance (TLP, note 1) RDYN 0.25 ohm TLP, tp = 100ns, tr = 2ns, calculated from 4A to 16A 3
Clamping voltage (8/20us, note 3) VCL 9 V IPP = 1A, tp = 8/20us 3
Clamping voltage (8/20us, note 3) VCL 13 V IPP = 9A, tp = 8/20us 3
Junction capacitance CJ 55 65 pF VR = 0V, f = 1MHz 3

CAD (KiCad official)

  • Symbol: ESDA6V1W5-5
  • Footprint: Package_TO_SOT_SMD:SOT-353_SC-70-5
  • 3D model: SOT-353 (KiCad packages3D, STEP)
  • 3D model files: esda6v1w5-5-etched.step / esda6v1w5-5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esda6v1w5-5.step / esda6v1w5-5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI Will Semicon datasheet (6 pp, sha256 495fbffd0a3d96b4, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF