component
MDT80N06D
Public Made by Adomby adom
Minos MOSFETs, TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownMDT80N06D
Minos · MOSFETs · TO-252-2L
MDT80N06D from Minos, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20V (VGS), with threshold VGS(th) of 2V min to 4V max at ID=250μA. |
| 2 | D | passive | Drain, connected to the exposed tab (the middle lead is trimmed to a stub in the 2L package); VDS 60V max, ID 80A continuous and 320A pulsed. |
| 3 | S | passive | Source; body diode forward voltage VSD is 1.2V max at IS=80A, and RDS(ON) is 8mΩ max at VGS=10V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Minos |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 7 | 8 | mΩ | VGS=10V, ID=20A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=80A | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 80 | A | 1 | |||
| Drain Current-Pulsed | IDM | 320 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 107 | W | Tc=25℃ | 1 | ||
| Single pulse avalanche energy | EAS | 280 | mJ | Note 2 | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.4 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
MDT80N06D - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
mdt80n06d-etched.step/mdt80n06d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mdt80n06d.step/mdt80n06d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Minos datasheet (6 pp, sha256
505c67702f912e01, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).