component
TM05P04MI
Public Made by Adomby adom
Tritech MOS MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTM05P04MI
Tritech MOS · MOSFETs · SOT-23-3L
TM05P04MI from Tritech MOS, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET with VGS rated ±20 V and threshold VGS(th) of -1.0 to -2.5 V at ID=-250µA. |
| 2 | S | passive | Source; body-diode anode side, continuous source-drain diode current up to -5.4 A. |
| 3 | D | passive | Drain; rated VDS of -40 V with continuous drain current of -5.4 A at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current @TA=25℃ | ID | -5.4 | A | TA=25℃ | 1 | ||
| Continuous Drain Current @TA=70℃ | ID | -3.5 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -20 | A | 1 | |||
| Total Power Dissipation @TA=25℃ | PD | 2 | W | TA=25℃ | 1 | ||
| Total Power Dissipation @TA=70℃ | PD | 1.5 | W | TA=70℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 65 | ℃/W | 1 | |||
| Thermal Resistance Junction-Ambient (t ≤10s) | RθJA | 48 | ℃/W | t ≤10s | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | -40 | V | VGS=0V, ID=-250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-40V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 45 | 54 | mΩ | VGS=-10V, ID=-5A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 55 | 68 | mΩ | VGS=-4.5V, ID=-4A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -5.4 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -22 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IS=-5.5A | 2 |
CAD (KiCad official)
- Symbol:
TM05P04MI - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
tm05p04mi-etched.step/tm05p04mi-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm05p04mi.step/tm05p04mi.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech MOS datasheet (7 pp, sha256
13812c212d914de0, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).