component
HSM24P03
Public Made by Adomby adom
HUASHUO MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSM24P03
HUASHUO · MOSFETs · SOP-8
HSM24P03 from HUASHUO, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET, one of three source pins; drain-source voltage rated -30 V. |
| 2 | S | passive | Source of the P-channel MOSFET, one of three source pins; continuous drain current rated -24 A. |
| 3 | S | passive | Source of the P-channel MOSFET, one of three source pins; connect in parallel with the other source pins. |
| 4 | G | input | Gate of the P-channel MOSFET, rated for gate-source voltage of ±20 V with threshold of -1.2 to -2.2 V. |
| 5 | D | passive | Drain of the P-channel MOSFET, one of four drain pins; drain-source voltage rated -30 V. |
| 6 | D | passive | Drain of the P-channel MOSFET, one of four drain pins; pulsed drain current rated -96 A. |
| 7 | D | passive | Drain of the P-channel MOSFET, one of four drain pins; connect in parallel with the other drain pins. |
| 8 | D | passive | Drain of the P-channel MOSFET, one of four drain pins; connect in parallel with the other drain pins. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -24 | A | TC=25℃, VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -96 | A | Pulsed | 1 | ||
| Total Power Dissipation | PD | 2.1 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 60 | ℃/W | Steady State | 1 | ||
| Thermal Resistance Junction-case | RθJC | 24 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 3.8 | 4.8 | mΩ | VGS=-10V, ID=-17A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 5.8 | 7.8 | mΩ | VGS=-4.5V, ID=-10A | 2 | |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.6 | -2.2 | V | VGS=VDS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | -10 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | -24 | A | VG=VD=0V, Force Current | 2 | ||
| Diode Forward Voltage | VSD | -1 | V | VGS=0V, IS=-1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSM24P03 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
hsm24p03-etched.step/hsm24p03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hsm24p03.step/hsm24p03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
f66c89a20d9eca89, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).