IPW65R190C7 from Infineon Technologies, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Gate	input	Gate terminal of the MOSFET; the datasheet limits gate-source voltage to -20 V to 20 V static and -30 V to 30 V dynamic (AC, f>1 Hz), with a typical gate resistance RG of 1.1 Ω.
2	Drain	passive	Drain terminal, also connected to the mounting tab; the datasheet rates the part at 650 V minimum drain-source breakdown voltage V(BR)DSS and 13 A continuous drain current at TC=25°C.
3	Source	passive	Source terminal, the reference for the gate-source voltage ratings; the datasheet gives a continuous diode forward current of 13 A at TC=25°C.

Key specifications

Parameter	Value
Manufacturer	Infineon Technologies
Package	TO-247
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Continuous drain current	ID			13	A	TC=25°C	4
Continuous drain current	ID			8	A	TC=100°C	4
Pulsed drain current	ID,pulse			49	A	TC=25°C	4
Avalanche energy, single pulse	EAS			57	mJ	ID=5.4A; VDD=50V; see table 10	4
Avalanche energy, repetitive	EAR			0.29	mJ	ID=5.4A; VDD=50V; see table 10	4
Avalanche current, single pulse	IAS			5.4	A		4
MOSFET dv/dt ruggedness	dv/dt			100	V/ns	VDS=0...400V	4
Gate source voltage (static)	VGS	-20		20	V	static	4
Gate source voltage (dynamic)	VGS	-30		30	V	AC (f>1 Hz)	4
Power dissipation	Ptot			72	W	TC=25°C	4
Storage temperature	Tstg	-55		150	°C		4
Operating junction temperature	Tj	-55		150	°C		4
Mounting torque				60	Ncm	M3 and M3.5 screws	4
Continuous diode forward current	IS			13	A	TC=25°C	4
Diode pulse current	IS,pulse			49	A	TC=25°C	4
Reverse diode dv/dt	dv/dt			1	V/ns	VDS=0...400V, ISD<=IS, Tj=25°C	4
Maximum diode commutation speed	dif/dt			55	A/µs	VDS=0...400V, ISD<=IS, Tj=25°C	4
Thermal resistance, junction - case	RthJC			1.73	°C/W		5
Thermal resistance, junction - ambient	RthJA			62	°C/W	leaded	5
Soldering temperature, wavesoldering	Tsold			260	°C	1.6mm (0.063 in.) from case for 10s; only allowed at leads	5
Drain-source breakdown voltage	V(BR)DSS	650			V	VGS=0V, ID=1mA	6
Gate threshold voltage	V(GS)th	3	3.5	4	V	VDS=VGS, ID=0.29mA	6
Zero gate voltage drain current	IDSS			10	µA	VDS=650V, VGS=0V, Tj=25°C	6
Gate-source leakage current	IGSS			100	nA	VGS=20V, VDS=0V	6
Drain-source on-state resistance	RDS(on)		0.168	0.19	Ω	VGS=10V, ID=5.7A, Tj=25°C	6

CAD (KiCad official)

Symbol: IPW65R190C7
Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
3D model: TO-247 (KiCad packages3D, STEP)
3D model files: ipw65r190c7-etched.step / ipw65r190c7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipw65r190c7.step / ipw65r190c7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Infineon Technologies datasheet (15 pp, sha256 18b438173483c7da, retrieved 2026-11-07, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

IPW65R190C7

Verified IPW65R190C7

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3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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